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부품번호 | CNB1304H 기능 |
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기능 | Reflective photosensor | ||
제조업체 | Panasonic | ||
로고 | |||
전체 2 페이지수
Reflective Photosensors (Photo Reflectors)
CNB1304H (ON2175)
Reflective photosensor
Tape end sensor for DAT
■ Overview
CNB1304H is a sensor which consists of a high efficiency GaAs
infrared light emitting diode and a high sensitivity Si phototransistor
which are arranged together in the same direction. It detects the
beginning and end of a tape based on changes in the amount of light
reflected from a prism which is situated outside of the sensor.
■ Features
• Fast response
• Small size and light weight
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Input (Light Reverse voltage
emitting diode) Forward current
Power dissipation *1
Output (Photo Collector-emitter voltage
transistor) (Base open)
VR
IF
PD
VCEO
3
50
75
30
V
mA
mW
V
Emitter-collector voltage VECO
(Base open)
5
V
Collector current
IC 20 mA
Collector power dissipation *2 PC
100 mW
Temperature Operating ambient temperature Topr −20 to +85 °C
Storage temperature
Tstg −30 to +100 °C
(R2.3) 4.0±0.3
φ2.2±0.3
2-φ1.2±0.15
(4-R0.3)
Unit: mm
3.75±0.15
8.0
+0
-0.3
7.0±0.3
(C0.3)
2-φ1.2±0.15
φ1.2+−00.3
2-0.4±0.2
(3.75)
2-0.15
+0.2
-0.1
(3.75)
42
1: Anode
2: Cathode
31
3: Collector
4: Emitter
PRSTR104-005 Package
(Note) ( ) Dimension is reference
Note) *1: Input power derating ratio is
1.0 mW/°C at Ta ≥ 25°C.
*2: Output power derating ratio is
1.33 mW/°C at Ta ≥ 25°C.
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Input Forward voltage
VF
characteristics Reverse current
IR
Output
Collector-emitter cutoff current ICEO
characteristics (Base open)
Transfer Collector current *1
IC
characteristics Collector-emitter saturation voltage VCE(sat)
Rise time
tr
Fall time
tf
IF = 50 mA
VR = 3 V
VCE = 10 V
VCE = 5 V, IF = 20 mA
IF = 50 mA, IC = 0.1 mA
VCC = 10 V, IC = 0.5 mA, RL = 100 Ω
100
1.5 V
10.0 µA
200 nA
1 500 µA
0.5 V
6 µs
6
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3. *1: IC measurement circuit
(Unit: mm)
2.5
11
CNB1304H
prism
*2: Switching time measurement circuit
Sig. in
50 Ω
VCC
Sig. out
RL
(Input pulse)
(Output pulse)
90%
10%
tr tf
tr: Rise time
tf: Fall time
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00049BED
1
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구 성 | 총 2 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CNB1304H | Reflective photosensor | Panasonic |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |