Datasheet.kr   

NGTB35N60FL2WG 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NGTB35N60FL2WG은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 NGTB35N60FL2WG 자료 제공

부품번호 NGTB35N60FL2WG 기능
기능 IGBT - Field Stop II
제조업체 ON Semiconductor
로고 ON Semiconductor 로고


NGTB35N60FL2WG 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 7 페이지수

미리보기를 사용할 수 없습니다

NGTB35N60FL2WG 데이터시트, 핀배열, 회로
NGTB35N60FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
Features
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5 ms Short−Circuit Capability
These are Pb−Free Devices
Typical Applications
Solar Inverters
Uninterruptible Power Supplies (UPS)
Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES 600 V
IC A
70
35
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF A
70
35
Diode Pulsed Current
TPULSE Limited by TJ Max
Pulsed collector current, Tpulse
limited by TJmax
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ +150°C
Gate−emitter voltage
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
IFM 120 A
ICM 120 A
tSC 5 ms
VGE
$20
V
$30
V
PD W
300
150
TJ −55 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
35 A, 600 V
VCEsat = 1.70 V
EOFF = 0.28 mJ
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
35N60FL2
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
NGTB35N60FL2WG TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 2
1
Publication Order Number:
NGTB35N60FL2W/D




NGTB35N60FL2WG pdf, 반도체, 판매, 대치품
NGTB35N60FL2WG
TYPICAL CHARACTERISTICS
110
100
90
80
70
60
50
40
30
20
10
0
0
TJ = 25°C
TJ = 150°C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
4.0
20
18
16
14
12
10
8
6
4 VCE = 480 V
2 VGE = 15 V
IC = 35 A
0
0 20 40 60 80 100 120 140
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
1.75
1.5
1.25
VCE = 400 V
VGE = 15 V
IC = 35 A
Rg = 10 W
1
0.75
0.5
0.25
Eon
Eoff
1000
100
VCE = 400 V
VGE = 15 V
IC = 35 A
Rg = 10 W
td(off)
tf
td(on)
tr
0
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
10
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
3.5
VCE = 400 V
3 VGE = 15 V
TJ = 150°C
2.5 Rg = 10 W
2
Eon
1.5
1 Eoff
0.5
0
15 20 25 30 35 40 45 50 55 60 65 70 75
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
1000
td(off)
100 tf
td(on)
tr
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
10
15 20 25 30 35 40 45 50 55 60 65 70 75
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
www.onsemi.com
4

4페이지










NGTB35N60FL2WG 전자부품, 판매, 대치품
NGTB35N60FL2WG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
−T−
C
−B−
E
N
A
1 23
U
L
4
−Q−
0.63 (0.025) M T B M
P
−Y−
K
F 2 PL
WJ
G
D 3 PL
0.25 (0.010) M Y Q S
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN MAX
A 20.32 21.08
B 15.75 16.26
C 4.70 5.30
D 1.00 1.40
E 1.90 2.60
F 1.65 2.13
G 5.45 BSC
H 1.50 2.49
J 0.40 0.80
K 19.81 20.83
L 5.40 6.20
N 4.32 5.49
P --- 4.50
Q 3.55 3.65
U 6.15 BSC
W 2.87 3.12
INCHES
MIN MAX
0.800 8.30
0.620 0.640
0.185 0.209
0.040 0.055
0.075 0.102
0.065 0.084
0.215 BSC
0.059 0.098
0.016 0.031
0.780 0.820
0.212 0.244
0.170 0.216
--- 0.177
0.140 0.144
0.242 BSC
0.113 0.123
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
7
NGTB35N60FL2W/D

7페이지


구       성 총 7 페이지수
다운로드[ NGTB35N60FL2WG.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
NGTB35N60FL2WG

IGBT - Field Stop II

ON Semiconductor
ON Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵