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부품번호 | NGTB30N60FWG 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 10 페이지수
NGTB30N60FWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
• Optimized for Very Low VCEsat
• Low Switching Loss Reduces System Power Dissipation
• Soft Fast Reverse Recovery Diode
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Power Factor Correction
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES 600 V
IC A
60
30
Pulsed collector current, Tpulse
limited by TJmax
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
Diode Pulsed Current
Tpulse Limited by TJmax
Short−circuit withstand time
VGE = 15 V, VCE = 300 V,
TJ ≤ +150°C
Gate−emitter voltage
Transient Gate Emitter Voltage
(tp = 5 ms, D < 0.010)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
ICM 120 A
IF A
60
30
IFM 120 A
tSC 5 ms
VGE
$20
V
$30
PD W
167
67
Operating junction temperature
range
TJ −55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 600 V
VCEsat = 1.45 V
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
30N60F
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB30N60FWG
Package
TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 1
1
Publication Order Number:
NGTB30N60FW/D
NGTB30N60FWG
TYPICAL CHARACTERISTICS
180
160 TJ = 25°C
VGE = 17 V to 13 V
140
120
100 11 V
80
60 10 V
40 9 V
20 7 V 8 V
0
0 1 2 3 4 5 6 78
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
200
180 TJ = 150°C
VGE = 17 V to 13 V
160
140
120
100 11 V
80 10 V
60
40 9 V
20 8 V
0 7V
0 1 2 3 4 5 6 78
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
180
160
140
120
100
80
60
40
20
0
0
VGE = 17 V to 13 V
TJ = −55°C
11 V
10 V
9V
7 V to 8 V
12 3 456 7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
8
160
140
120 TJ = 25°C
100 TJ = 150°C
80
60
40
20
0 0 4 8 12 16
VGE, GATE−EMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0
−75
IC = 60 A
10,000
Cies
IC = 30 A
IC = 15 A
IC = 5 A
1000
100
−25 25
75 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
10
175 0
Coes
Cres
20 40 60 80
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
100
http://onsemi.com
4
4페이지 1
50% Duty Cycle
20%
0.1 10%
5%
2%
0.01 1%
Single Pulse
0.001
0.000001
0.00001
10
NGTB30N60FWG
TYPICAL CHARACTERISTICS
RqJC = 0.75
Junction R1
Ci = ti/Ri
C1
R2
C2
Ri (°C/W) ti (sec)
Rn Case 0.03276 1.0E−4
0.07477 6.84E−5
0.12790 0.002
0.17518 0.03
0.22911
0.1
Cn
0.11135
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
0.1
1
10 100 1000
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
1 50% Duty Cycle
RqJC = 1.06
20%
0.1 10%
5%
0.01 2%
1%
0.001
0.000001
Junction R1
Ci = ti/Ri
C1
R2
C2
Rn Case Ri (°C/W) ti (sec)
0.20043 1.48E−4
0.42428 0.002
0.51036 0.03
0.34767
0.1
Cn
0.11135
2.0
Single Pulse
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.00001
0.0001
0.001
0.01 0.1
PULSE TIME (sec)
1
10 100
Figure 20. Diode Transient Thermal Impedance
1000
Figure 21. Test Circuit for Switching Characteristics
http://onsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
NGTB30N60FWG | IGBT ( Insulated Gate Bipolar Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |