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NGTB30N60FWG 데이터시트 PDF




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부품번호 NGTB30N60FWG 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
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NGTB30N60FWG 데이터시트, 핀배열, 회로
NGTB30N60FWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
Optimized for Very Low VCEsat
Low Switching Loss Reduces System Power Dissipation
Soft Fast Reverse Recovery Diode
5 ms ShortCircuit Capability
These are PbFree Devices
Typical Applications
Power Factor Correction
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES 600 V
IC A
60
30
Pulsed collector current, Tpulse
limited by TJmax
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
Diode Pulsed Current
Tpulse Limited by TJmax
Shortcircuit withstand time
VGE = 15 V, VCE = 300 V,
TJ +150°C
Gateemitter voltage
Transient Gate Emitter Voltage
(tp = 5 ms, D < 0.010)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
ICM 120 A
IF A
60
30
IFM 120 A
tSC 5 ms
VGE
$20
V
$30
PD W
167
67
Operating junction temperature
range
TJ 55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 600 V
VCEsat = 1.45 V
C
G
E
G
C
E
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
30N60F
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB30N60FWG
Package
TO247
(PbFree)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2012
December, 2012 Rev. 1
1
Publication Order Number:
NGTB30N60FW/D




NGTB30N60FWG pdf, 반도체, 판매, 대치품
NGTB30N60FWG
TYPICAL CHARACTERISTICS
180
160 TJ = 25°C
VGE = 17 V to 13 V
140
120
100 11 V
80
60 10 V
40 9 V
20 7 V 8 V
0
0 1 2 3 4 5 6 78
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 1. Output Characteristics
200
180 TJ = 150°C
VGE = 17 V to 13 V
160
140
120
100 11 V
80 10 V
60
40 9 V
20 8 V
0 7V
0 1 2 3 4 5 6 78
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. Output Characteristics
180
160
140
120
100
80
60
40
20
0
0
VGE = 17 V to 13 V
TJ = 55°C
11 V
10 V
9V
7 V to 8 V
12 3 456 7
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 3. Output Characteristics
8
160
140
120 TJ = 25°C
100 TJ = 150°C
80
60
40
20
0 0 4 8 12 16
VGE, GATEEMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0
75
IC = 60 A
10,000
Cies
IC = 30 A
IC = 15 A
IC = 5 A
1000
100
25 25
75 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
10
175 0
Coes
Cres
20 40 60 80
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
100
http://onsemi.com
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NGTB30N60FWG 전자부품, 판매, 대치품
1
50% Duty Cycle
20%
0.1 10%
5%
2%
0.01 1%
Single Pulse
0.001
0.000001
0.00001
10
NGTB30N60FWG
TYPICAL CHARACTERISTICS
RqJC = 0.75
Junction R1
Ci = ti/Ri
C1
R2
C2
Ri (°C/W) ti (sec)
Rn Case 0.03276 1.0E4
0.07477 6.84E5
0.12790 0.002
0.17518 0.03
0.22911
0.1
Cn
0.11135
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
0.1
1
10 100 1000
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
1 50% Duty Cycle
RqJC = 1.06
20%
0.1 10%
5%
0.01 2%
1%
0.001
0.000001
Junction R1
Ci = ti/Ri
C1
R2
C2
Rn Case Ri (°C/W) ti (sec)
0.20043 1.48E4
0.42428 0.002
0.51036 0.03
0.34767
0.1
Cn
0.11135
2.0
Single Pulse
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.00001
0.0001
0.001
0.01 0.1
PULSE TIME (sec)
1
10 100
Figure 20. Diode Transient Thermal Impedance
1000
Figure 21. Test Circuit for Switching Characteristics
http://onsemi.com
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부품번호상세설명 및 기능제조사
NGTB30N60FWG

IGBT ( Insulated Gate Bipolar Transistor )

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