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2SA1648-Z PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 2SA1648-Z
기능 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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2SA1648-Z 데이터시트, 핀배열, 회로
( DataSheet : www.DataSheet4U.com )
DATA SHEET
SILICON POWER TRANSISTOR
2SA1648,1648-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1648 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
PACKAGE DRAWINGS (Unit: mm)
6.5 ±0.2
5.0 ±0.2
4
2.3 ±0.2
0.5 ±0.1
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
VCE(sat)1 = 0.3 V MAX. (IC = 3.0 A)
• Fast switching speed:
tf = 0.3 µs MAX. (IC = 3.0 A)
• High DC current gain and excellent linearity
123
1.1 ±0.2
2.3 2.3
0.5
+0.2
0.1
0.5
+0.2
0.1
TO-251 (MP-3)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Symbol
VCBO
Ratings
100
Unit
V
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
VCEO
VEBO
IC(DC)
I Note 1
C(pulse)
60
7.0
5.0
10
V
V
A
A
123
1.1±0.2
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
Base current (DC)
Total power dissipation (Tc = 25°C)
Total power dissipation (Ta = 25°C)
Junction temperature
Storage temperature
IB(DC)
PT
PT
Tj
Tstg
2.5
18
1.0Note 2, 2.0Note 3
150
55 to +150
A
W
W
°C
°C
Notes 1. PW 300 µs, Duty Cycle 10%
2. Printing board mounted
3. 7.5 mm2 × 0.7 mm ceramic board mounted
TO-252 (MP3Z)
ELECTRODE CONNECTION
1. Base
2. Collector
3. Emitter
4. Collector (Fin)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16121EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
www.DataSheet4U.com
The mark shows major revised points.
c
2002




2SA1648-Z pdf, 반도체, 판매, 대치품
IC = 20 A IB
Pulse test
2SA1648,1648-Z
TC = 25°C
Collector Current IC (A)
IE = 0 A
Collector Current IC (A)
Collector to Base Voltage VCB (V)
IC = 20 A IB1 = 20 A IB2
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
4 Data Sheet D16121EJ3V0DS

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