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2SK3628 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 2SK3628
기능 Silicon N-channel power MOSFET
제조업체 Panasonic
로고 Panasonic 로고 


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2SK3628 데이터시트, 핀배열, 회로
Power MOSFETs
2SK3628
Silicon N-channel power MOSFET
For hihg-speed switching
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
Features
Avalanche energy capability guaranteed
High-speed switching
Low ON resistance Ron
No secondary breakdown
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability *
VDSS
VGSS
ID
IDP
EAS
230
±30
20
80
570
V
V
A
A
mJ
Power
dissipation
Ta = 25°C
Channel temperature
Storage temperature
PD 100
3
Tch 150
Tstg 55 to +150
W
°C
°C
Note) *: L = 2.23 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1: Gate
2: Drain
3: Source
TOP-3F-B1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Gate-drain surrender voltage
Diode forward voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
VDSS
VDSF
Vth
IDSS
IGSS
RDS(on)
Yfs
Ciss
ID = 1 mA, VGS = 0
IDR = 20 A, VGS = 0
VDS = 25 V, ID = 1 mA
VDS = 184 V, VGS = 0
VGS = ±30 V, VDS = 0
VGS = 10 V, ID = 10 A
VDS = 25 V, ID = 10 A
VDS = 25 V, VGS = 0, f = 1 MHz
230
1.5
1.7 3.7
100
±1
65 85
7 14
2 300
V
V
V
µA
µA
m
S
pF
Short-circuit output capacitance
(Common-source)
Coss
330 pF
Reverse transfer capacitance
(Common-source)
Crss
30 pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD 100 V, ID = 15 A
RL = 6.7 , VGS = 10 V
35 ns
26 ns
220 ns
36 ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2004
SJG00041AED
1






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