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2SK3559 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 2SK3559
기능 N-channel enhancement mode MOSFET
제조업체 Panasonic
로고 Panasonic 로고 


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2SK3559 데이터시트, 핀배열, 회로
Silicon MOSFET
2SK3559
N-channel enhancement mode MOSFET
High speed switching
Absolute Maximum Ratings
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Allowable power Tc = 25 °C *1
dissipation
Ta = 25 °C *2
Junction temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PD
Tj
Tstg
Rating
230
30
30
120
100
3
150
-55 to +150
*1 : Tc = 25 °C
*2 : Ta = 25 °C (Without heat sink )
Unit
V
V
A
A
W
W
°C
°C
15.0±0.3
11.0±0.2
Unit : mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
TOP-3F-B1
Electrical Characteristics (Tc = 25 ± 3 °C)
Parameter
Symbol
Condition
Min Typ Max Unit
Drain Cutoff Current
IDSS VDS = 184V, VGS = 0
− − 100 µ A
Gate-source Leakage Current
IGSS VGS = ± 30 V, VDS = 0
− − ±1 µA
Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0
230 − − V
Gate Threshold Voltage
Vth VDS = 25 V, ID = 1 mA
2
4V
Drain-source on Resistance
RDS (on) VGS = 10 V, ID = 15 A
55 74 m
Forward Transfer Admittance
Yfs VDS = 25 V, ID = 15 A
8
16
S
Diode Forward Voltage
VDSF IDR = 30 A, VGS = 0
− − -1.5 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss VDS = 25 V, VGS = 0,
Crss f = 1MHz
3170
440
35
pF
pF
pF
Turn-on delay time
Rise time
td (on)
36 n s
tr VDD = 100V, ID = 15 A
25
ns
Turn-off delay time
td (off) RL = 6.7 , VGS = 10 V
217
ns
Fall time
tf
35 n s





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