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2SK3652 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 2SK3652
기능 N-channel enhancement mode MOSFET
제조업체 Panasonic
로고 Panasonic 로고 


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2SK3652 데이터시트, 핀배열, 회로
This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3652
N-channel enhancement mode MOSFET
Features
Low on-resistance, low Qg
High avalanche resistance
Applications
For PDP
For high-speed switching
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability *
VDSS
VGSS
ID
IDP
EAS
230
±30
50
200
2 200
V
V
A
A
mJ
Power dissipation
Junction temperature
Storage temperature
Ta = 25°C
PD
Tj
Tstg
100
3
150
55 to +150
W
°C
°C
Note) *: L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
12 3
1: Gate
2: Drain
3: Source
TOP-3E-A1 Package
Marking Symbol: K3652
Internal Connection
D
G
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Drain-source surrender voltage
VDSS
Gate threshold voltage
Vth
Drain-source cutoff current
IDSS
Gate-source cutoff current
IGSS
Drain-source ON resistance
RDS(on)
Forward transfer admittance
Yfs
Short-circuit forward transfer capacitance Ciss
(Common-source)
ID = 1 mA, VGS = 0
VDS = 25 V, ID = 10 mA
VDS = 184 V, VGS = 0
VGS = ±30 V, VDS = 0
VGS = 10 V, ID = 25 A
VDS = 25 V, ID = 25 A
VDS = 25 V, VGS = 0, f = 1 MHz
Short-circuit output capacitance
(Common-source)
Coss
Reverse transfer capacitance
(Common-source)
Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
Tr
td(off)
tf
VDD = 100 V, ID = 25 A
RL = 4 , VGS = 10 V
Publication date: March 2004
SJG00034AED
S
Min Typ Max
230
24
100
±1
29 40
17 35
5 950
Unit
V
V
µA
µA
m
S
pF
850 pF
80 pF
65 ns
140 ns
470 ns
145 ns
1





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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


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