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부품번호 | BC817-25L 기능 |
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기능 | General Purpose Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 10 페이지수
BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
NPN Silicon
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
45 V
50 V
5.0 V
500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
6x M G
G
1
6x = Device Code
x = A, B, or C
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 12
http://oneic.com/
1
Publication Order Number:
BC817−16LT1/D
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L
1.0
TJ = 25°C
0.8
0.6
0.4 IC = 10 mA 100 mA 300 mA
500 mA
0.2
0
0.01
0.1 1 10
IB, BASE CURRENT (mA)
Figure 5. Saturation Region
100
+1
qVC for VCE(sat)
0
-1
-2 qVB for VBE
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 6. Temperature Coefficients
100
Cib
10
Cob
1
0.1 1 10 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
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http://onsemi.com
4
4페이지 BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L
700
600 150°C
VCE = 1 V
500
400 25°C
300
−55°C
200
100
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 16. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 10
0.9
−55°C
0.8 25°C
0.7
0.6 150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
1000
VCE = 1 V
TA = 25°C
1
IC/IB = 10
0.1
0.01
25°C
150°C
−55°C
0.001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9 −55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 19. Base Emitter Voltage vs. Collector
Current
100
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10
0.1
1
10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
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7
7페이지 | |||
구 성 | 총 10 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
BC817-25 | 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 | Diodes Incorporated |
BC817-25 | NPN Silicon AF Transistors | Siemens Semiconductor Group |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |