Datasheet.kr   

SBC817-25L PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SBC817-25L
기능 General Purpose Transistors
제조업체 ON Semiconductor
로고 ON Semiconductor 로고 


전체 10 페이지

		

No Preview Available !

SBC817-25L 데이터시트, 핀배열, 회로
BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
NPN Silicon
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
45 V
50 V
5.0 V
500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
3
1
2
SOT23
CASE 318
STYLE 6
MARKING DIAGRAM
6x M G
G
1
6x = Device Code
x = A, B, or C
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 12
http://oneic.com/
1
Publication Order Number:
BC81716LT1/D
SBC817-25L pdf, 반도체, 판매, 대치품
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
TYPICAL CHARACTERISTICS BC81716L, SBC81716L
1.0
TJ = 25°C
0.8
0.6
0.4 IC = 10 mA 100 mA 300 mA
500 mA
0.2
0
0.01
0.1 1 10
IB, BASE CURRENT (mA)
Figure 5. Saturation Region
100
+1
qVC for VCE(sat)
0
-1
-2 qVB for VBE
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 6. Temperature Coefficients
100
Cib
10
Cob
1
0.1 1 10 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
http://oneic.com/
http://onsemi.com
4

4페이지

SBC817-25L 전자부품, 판매, 대치품
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
TYPICAL CHARACTERISTICS BC81740L, SBC81740L
700
600 150°C
VCE = 1 V
500
400 25°C
300
55°C
200
100
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 16. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 10
0.9
55°C
0.8 25°C
0.7
0.6 150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
1000
VCE = 1 V
TA = 25°C
1
IC/IB = 10
0.1
0.01
25°C
150°C
55°C
0.001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9 55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 19. Base Emitter Voltage vs. Collector
Current
100
http://oneic.com/
10
0.1
1
10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
http://onsemi.com
7

7페이지





구       성총 10 페이지
다운로드[ SBC817-25L.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
SBC817-25L

General Purpose Transistors

ON Semiconductor
ON Semiconductor

추천 데이터시트

부품번호상세설명 및 기능제조사
CQ1565RT

FSCQ1565RT, Green Mode Fairchild Power Switch. In general, a Quasi-Resonant Converter (QRC) shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a fixed switching frequency.

Fairchild
Fairchild
KF16N25D

MOSFET의 기능은 N Channel MOS Field effect transistor입니다. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.( Vdss=250V, Id=13A )

KEC
KEC

DataSheet.kr    |   2018   |  연락처   |  링크모음   |   검색  |   사이트맵