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7MBP200VEA120-50 데이터시트 PDF




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부품번호 7MBP200VEA120-50 기능
기능 IGBT MODULE
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7MBP200VEA120-50 데이터시트, 핀배열, 회로
http://www.fujielectric.com/products/semiconductor/
7MBP200VEA120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 200A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specified)
Items
Symbol
Min.
Max.
Units
Collector-Emitter Voltage (*1)
VCES
0 1200 V
Short Circuit Voltage
VSC
400 800
V
DC IC
- 200 A
Collector Current
1ms
Icp
- 400 A
Duty=100% (*2) -IC
- 200 A
Collector Power Dissipation 1 device (*3)
PC
- 961 W
Collector Current
DC
1ms
IC
Icp
- 100 A
- 200 A
Forward Current of Diode
IF
- 100 A
Collector Power Dissipation 1 device (*3)
PC
- 581 W
Supply Voltage of Pre-Driver (*4)
VCC
-0.5 20
V
Input Signal Voltage (*5)
Vin
-0.5 VCC+0.5
V
Alarm Signal Voltage (*6)
VALM
-0.5
VCC
V
Alarm Signal Current (*7) IALM - 20 mA
Junction Temperature
Tj - 150 ºC
Operating Case Temperature
Topr
-20 110 ºC
Storage Temperature
Tstg -40 125 ºC
Solder Temperature (*8)
Tsol - 260 ºC
Isolating Voltage (*9)
Viso
-
AC2500
Vrms
Screw Torque
Terminal (M5)
Mounting (M5)
-
- 3.5 Nm
Note *1: VCES shall be applied to the input voltage between all Collector and Emitter. [ P1- (U, V, W ,B), P2- (U, V, W, B), (U ,V ,W ,B)-N1, (U, V, W, B)-N2 ]
Note *2: Duty=125ºC/Rth(j-c)D /(IF×VF Max.)×100
Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake)
Note *4: VCC shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 15~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 19 and 13.
Note *7: IALM shall be applied to the input current to terminal No.4, 8, 12 and 19.
Note *8: Immersion time 10±1 sec. 1 time.
Note *9: Terminal to base, 50/60Hz sine wave 1 min. All terminals should be connected together during the test.
1




7MBP200VEA120-50 pdf, 반도체, 판매, 대치품
7MBP200VEA120-50
Characteristics (Representative)
Power supply current vs. Switching frequency
Tj = 25(typ.)
200
Low-side
High-side
150
V CC =17V
V CC=15V
V CC=13V
100
50
0
0
V CC =17V
V CC=15V
V CC=13V
5 10 15 20
Switchig frequency : fsw [ kHz ]
25
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Input signal threshold voltage
vs. Power supply voltage (typ.)
3.0
T C=25~125
2.5
2.0
Vinth(off)
1.5
Vinth(on)
1.0
0.5
0.0
12
13 14 15 16 17
Power supply voltage : VCC [ V ]
18
Under voltage vs. Junction temperature (typ.)
15
12
9
6
3
0
0 20 40 60 80 100 120 140
Junction temperature : Tj [ ]
Under voltage hysterisis
vs. Junction temperature (typ.)
1
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140
Junction temperature : Tj [ ]
Alarm hold time vs. Power supply voltage (typ.)
10
t ALM(TjOH)
8
6
4
t ALM(OC)
2
0
12 13 14 15 16 17 18
Power supply voltage : VCC [ V ]
4
Over heating characteristics
T jOH, TjH vs. V CC (typ.)
200
TjOH
150
100
50
0
12
TjH
13 14 15 16 17
Power supply voltage : VCC [ V ]
18

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7MBP200VEA120-50 전자부품, 판매, 대치품
7MBP200VEA120-50
10000
Switching time vs. Collector current (typ.)
V DC =600V, VCC =15V, Tj =25
1000
t on
t off
100
tf
10
0
1000
100
100 200 300
Collector current : IC [ A ]
Reverse recovery characteristics (typ.)
trr, Irr vs. If
400
t rr Tj=125
t rr Tj=25
I rr Tj=125
I rr Tj=25
10
1
0 100 200 300 400
Forward current : IF [ A ]
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
10000
Switching time vs. Collector current (typ.)
V DC =600V, VCC=15V, Tj =125
1000
t on
t off
100
tf
10
0
100 200 300
Collector current : IC [ A ]
400
1000
Over current protection vs. Junction temperature (typ.)
VCC =15V
800
600
400
200
0
0
20 40 60 80 100 120 140
Junction temperature : Tj [ ]
7

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7MBP200VEA120-50

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7MBP200VEA120-50

IGBT MODULE

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