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부품번호 | 7MBR35VW120-50 기능 |
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기능 | IGBT MODULE | ||
제조업체 | Fuji Electric | ||
로고 | |||
7MBR35VW120-50
IGBT MODULE (V series)
1200V / 35A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
IGBT Modules
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Repetitive peak reverse voltage (Diode)
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
VCES
VGES
Ic
Icp
-Ic
-Ic pulse
Pc
VCES
VGES
IC
ICP
PC
VRRM
VRRM
IO
IFSM
I2t
Junction temperature
Tj
Operating junciton temperature
(under switching conditions)
Tjop
Case temperature
Storage temperature
Tc
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Screw torque Mounting (*3)
-
Continuous
1ms
1ms
1 device
Tc=80°C
Tc=80°C
Continuous
1ms
1 device
Tc=80°C
Tc=80°C
50Hz/60Hz, sine wave
10ms, Tj=150°C
half sine wave
Inverter, Brake
Converter
Inverter, Brake
Converter
AC : 1min.
M5
Maximum
ratings
1200
±20
35
70
35
70
210
1200
±20
25
50
170
1200
1600
35
260
338
175
150
150
150
125
-40 to +125
2500
3.5
Units
V
V
A
W
V
V
A
W
V
V
A
A
A2s
°C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
7MBR35VW120-50
IGBT Modules
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=27Ω, Tj= 125°C
10000
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=27Ω, Tj= 150°C
10000
1000
100
toff
ton
tr
tf
10
0
20 40 60
Collector current: IC [A]
80
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=600V, Ic=35A, VGE=±15V, Tj= 125°C
10000
1000
100
toff
ton
tr
tf
10
10
Gate resistance : Rg [Ω]
100
[ Inverter ]
Switching loss vs. gate resistance (typ.)
Vcc=600V, Ic=35A, VGE=±15V
7
6 Eon(150°C)
5 Eon(125°C)
4 Eoff(150°C)
3 Eoff(125°C)
Err(150°C)
2
Err(125°C)
1
0
10
100
Gate resistance : Rg [Ω]
1000
100
toff
ton
tr
tf
10
0
20 40 60
Collector current: IC [A]
80
[ Inverter ] a
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=27Ω
10
Eon(150°C)
8
Eon(125°C)
Eoff(150°C)
6 Eoff(125°C)
4
Err(150°C)
Err(125°C)
2
0
0 25 50 75 100
Collector current: IC [A]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 27Ω ,Tj <= 125°C
100
90
80
70
60
50
40
30
20
10
0
0
RBSOA
(Repetitive pulse)
400 800
1200
Collector-Emitter voltage : VCE [V]
4
4페이지 7MBR35VW120-50
Outline Drawings, mm
IGBT Modules
shows theoretical dimension.
( ) shows reference dimension.
Equivalent Circuit Schematic
Section A-A
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ 7MBR35VW120-50.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
7MBR35VW120-50 | Power Devices (IGBT) | ETC |
7MBR35VW120-50 | IGBT MODULE | Fuji Electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |