|
|
|
부품번호 | 6MBP100VDA120-50 기능 |
|
|
기능 | IGBT Module | ||
제조업체 | Fuji Electric | ||
로고 | |||
전체 8 페이지수
http://www.fujielectric.com/products/semiconductor/
6MBP100VDA120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 100A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specified)
Items
Symbol
Min.
Collector-Emitter Voltage (*1)
VCES
0
Short Circuit Voltage
VSC 400
DC IC
-
Collector Current
1ms
Icp
-
Duty=89% (*2)
-IC
-
Collector Power Dissipation 1 device (*3)
PC
-
Collector Current
DC
1ms
IC
Icp
-
-
Forward Current of Diode
IF
-
Collector Power Dissipation 1 device (*3)
PC
-
Supply Voltage of Pre-Driver (*4)
VCC
-0.5
Input Signal Voltage (*5)
Vin -0.5
Alarm Signal Voltage (*6)
VALM
-0.5
Alarm Signal Current (*7) IALM -
Junction Temperature
Tj -
Operating Case Temperature
Topr
-20
Storage Temperature
Tstg -40
Solder Temperature (*8)
Tsol -
Isolating Voltage (*9)
Viso -
Screw Torque
Terminal (M4)
Mounting (M4)
-
-
Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W, B)-N.
Note *2: Duty=125ºC/Rth(j-c)D /(IF×VF Max.)×100
Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake)
Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13.
Note *7: IALM shall be applied to the input current to terminal No.2,6,10 and 19.
Note *8: Immersion time 10±1sec. 1time.
Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test.
Max.
1200
800
100
200
100
417
-
-
-
-
20
VCC+0.5
VCC
20
150
110
125
260
AC2500
1.7
Units
V
V
A
A
A
W
A
A
A
W
V
V
V
mA
ºC
ºC
ºC
ºC
Vrms
Nm
1
6MBP100VDA120-50
Characteristics (Representative)
Power supply current vs. Switching frequency
Tj= 25℃(typ.)
80 N-side
70 P-side
60
VCC=17V
50
VCC=15V
VCC=13V
40
30
20 VCC=17V
VCC=15V
VCC=13V
10
0
0 5 10 15 20 25
Switchig frequency : fSW [ kHz ]
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Input signal threshold voltage
vs. Power supply voltage (typ.)
3
TC=25~125℃
2.5
2
1.5
1
Vinth(off)
Vinth(on)
0.5
0
12 13 14 15 16 17 18
Power supply voltage : VCC [ V ]
Under voltage vs. Junction temperature (typ.)
15
12
9
6
3
0
0 20 40 60 80 100 120 140
Junction temperature : Tj [ ℃ ]
Alarm hold time vs. Power supply voltage (typ.)
10
tALM(TjOH)
8
6
4
tALM(OC)
2
0
12
13 14 15 16
Power supply voltage : VCC [ V ]
17
18
4
Under voltage hysterisis
vs. Junction temperature (typ.)
1
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140
Junction temperature : Tj [ ℃ ]
Over heating characteristics
TjOH,TjH vs. VCC (typ.)
200
TjOH
150
100
50
0
12
TjH
13 14 15 16 17
Power supply voltage : VCC [ V ]
18
4페이지 6MBP100VDA120-50
10000
Switching time vs. Collector current (typ.)
VDC=600V,VCC=15V,Tj=25℃
1000
t on
t off
100
tf
10
0
1000
20 40 60 80 100 120 140 160
Collector current : IC [ A ]
Reverse recovery characteristics (typ.)
trr,Irr vs. If
trr Tj=25℃
trr Tj=125℃
100
Irr Tj=25℃
10 Irr Tj=125℃
1
0 20 40 60 80 100 120 140 160
Forward current : IF [ A ]
Outline Drawings, mm
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
10000
Switching time vs. Collector current (typ.)
VDC=600V,VCC=15V,Tj=125℃
1000
ton
toff
100
tf
10
0
20 40 60 80 100 120 140 160
Collector current : IC [ A ]
Over current protection vs. Junction temperature (typ.)
VCC=15V
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140
Junction temperature : Tj [ ℃ ]
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ 6MBP100VDA120-50.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
6MBP100VDA120-50 | Power Devices (IGBT) | ETC |
6MBP100VDA120-50 | IGBT Module | Fuji Electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |