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부품번호 | 6MBP150VEA120-50 기능 |
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기능 | IGBT Module | ||
제조업체 | Fuji Electric | ||
로고 | |||
전체 8 페이지수
http://www.fujielectric.com/products/semiconductor/
6MBP150VEA120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 150A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC=25°C, VCC=15V unless otherwise specified)
Items
Symbol
Min.
Collector-Emitter Voltage (*1)
VCES
0
Short Circuit Voltage
VSC 400
DC IC
-
Collector Current
1ms
ICP
-
Duty=100% (*2) -IC
-
Collector Power Dissipation 1 device (*3)
PC
-
Collector Current
DC
1ms
IC
ICP
-
-
Forward Current of Diode
IF
-
Collector Power Dissipation 1 device (*3)
PC
-
Supply Voltage of Pre-Driver (*4)
VCC
-0.5
Input Signal Voltage (*5)
Vin -0.5
Alarm Signal Voltage (*6)
VALM
-0.5
Alarm Signal Current (*7) IALM -
Junction Temperature
Tj -
Operating Case Temperature
Topr
-20
Storage Temperature
Tstg -40
Solder Temperature (*8)
Tsol -
Isolating Voltage (*9)
Viso -
Screw Torque
Terminal (M5)
Mounting (M5)
-
-
Note *1: VCES shall be applied to the input voltage between all Collector and Emitter.
[ P1-(U,V,W,B) , P2-(U,V,W,B) , (U,V,W,B)-N1 , (U,V,W,B)-N2 ]
Note *2: Duty=125°C/Rth(j-c)D/(IF×VF Max.)×100
Note *3: PC=125°C/Rth(j-c)Q (Inverter & Brake)
Note *4: VCC shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 15~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 19 and 13.
Note *7: IALM shall be applied to the input current to terminal No.4, 8, 12 and 19.
Note *8: Immersion time 10±1sec. 1 time
Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test.
Max.
1200
800
150
300
150
781
-
-
-
-
20
VCC+0.5
VCC
20
150
110
125
260
AC2500
3.5
Units
V
V
A
A
A
W
A
A
A
W
V
V
V
mA
°C
°C
°C
°C
Vrms
Nm
1
6MBP150VEA120-50
Characteristics (Representative)
Power supply current vs. Switching frequency
Tj= 25°C(typ.)
200
Low-side
High-side
150
VCC=17V
VCC=15V
100 VCC=13V
50
0
0
VCC=17V
VCC=15V
VCC=13V
5 10 15 20
Switchig frequency : fsw [ kHz ]
25
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Input signal threshold voltage
vs. Power supply voltage (typ.)
3.0
TC=25~125°C
2.5
2.0
Vinth(off)
1.5
Vinth(on)
1.0
0.5
0.0
12
13 14 15 16 17
Power supply voltage : VCC [ V ]
18
Under voltage vs. Junction temperature (typ.)
15
12
9
6
3
0
0 20 40 60 80 100 120 140
Junction temperature : Tj [ °C ]
Under voltage hysterisis
vs. Junction temperature (typ.)
1
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140
Junction temperature : Tj [ °C ]
Alarm hold time vs. Power supply voltage (typ.)
10
tALM(TjOH)
8
6
4
tALM(OC)
2
0
12
13 14 15 16 17
Power supply voltage : VCC [ V ]
18
4
Over heating characteristics
TjOH,TjH vs. VCC (typ.)
200
TjOH
150
100
50
0
12
TjH
13 14 15 16 17
Power supply voltage : VCC [ V ]
18
4페이지 6MBP150VEA120-50
10000
Switching time vs. Collector current (typ.)
VDC=600V,VCC=15V,Tj=25°C
1000
ton
toff
100
tf
10
0
1000
50 100 150 200 250
Collector current : IC [ A ]
Reverse recovery characteristics (typ.)
trr,Irr vs. If
300
100
trr Tj=125°C
trr Tj=25°C
Irr Tj=125°C
Irr Tj=25°C
10
1
0 50 100 150 200
Forward current : IF [ A ]
Outline Drawings, mm
250
300
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
10000
Switching time vs. Collector current (typ.)
VDC=600V,VCC=15V,Tj=125°C
1000
ton
toff
100
tf
10
0
50 100 150 200 250 300
Collector current : IC [ A ]
1000
Over current protection vs. Junction temperature (typ.)
VCC=15V
800
600
400
200
0
0
20 40 60 80 100 120
Junction temperature : Tj [ °C ]
140
7
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다운로드 | [ 6MBP150VEA120-50.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
6MBP150VEA120-50 | Power Devices (IGBT) | ETC |
6MBP150VEA120-50 | IGBT Module | Fuji Electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |