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PDF 1MBI200HH-120L-50 Data sheet ( Hoja de datos )
| Número de pieza | 1MBI200HH-120L-50 | |
| Descripción | IGBT Module | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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http://www.fujielectric.com/products/semiconductor/
1MBI200HH-120L-50
IGBT MODULE
1200V / 200A / 1 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier (DB)
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
IC
Collector current
Icp
-IC
-IC pluse
Collector Power Dissipation
PC
Reverse voltage for FWD
VR
Forword current for FWD
IF
IF pulse
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Screw Torque
Mounting (*3)
Terminals (*4)
-
Conditions
Continuous
1ms
TC=25°C
TC=80°C
TC=25°C
TC=80°C
1ms
1 device
Continuous
1ms
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
Note *3: Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
Note *4: Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
Maximum ratings
1200
±20
300
200
600
400
75
150
1390
1200
200
400
+150
-40 to +125
2500
3.5
4.5
Units
V
V
A
W
V
A
°C
VAC
Nm
1
1 page  
1MBI200HH-120L-50
FWD
Forward current vs. Forward on voltage for Inverse Diode (typ.)
chip
400
Tj=125°C
Tj=25°C
300
200
100
0
0 2 4 6 8 10
Forward on voltage : VF [ V ]
Inverse Diode
Forward current vs. Forward on voltage (typ.)
chip
200
Tj=25°C Tj=125°C
150
100
50
0
01234
Forward on voltage : VF [ V ]
Thermistor
Temperature characteristic (typ.)
100
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
1000
FWD
Reverse recovery characteristics (typ.)
VCC=600V, VGE=±15V, RG=3.1Ω
100
Irr (125°C)
Irr (25°C)
trr (125°C)
trr (25°C)
10
0 100 200 300
Forward current : IF [ A ]
1.000
0.100
Transient thermal resistance (max.)
Inverse Diode
FWD
IGBT
0.010
0.001
0.001
0.010
0.100
Pulse width : Pw [ sec ]
1.000
10
1
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature [°C ]
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 1MBI200HH-120L-50.PDF ] | |
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