Datasheet.kr   

6MBI100U4B-120-50 데이터시트 PDF




Fuji Electric에서 제조한 전자 부품 6MBI100U4B-120-50은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 6MBI100U4B-120-50 자료 제공

부품번호 6MBI100U4B-120-50 기능
기능 IGBT Module
제조업체 Fuji Electric
로고 Fuji Electric 로고


6MBI100U4B-120-50 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 14 페이지수

미리보기를 사용할 수 없습니다

6MBI100U4B-120-50 데이터시트, 핀배열, 회로
SPECIFICATION
Device Name
Type Name
: IGBT Module
(RoHS compliant product)
: 6MBI100U4B-120-50
Spec. No. : MS5F 6192
Feb. 02 06 K.Muramatsu
Feb. 02 06 M.W atanabe T.Miyasaka
K.Yamada
MS5F 6192
a
1
14
H04-004-07b




6MBI100U4B-120-50 pdf, 반도체, 판매, 대치품
3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified )
It em s
Sym b o l s
Conditions
Max i m u m
Ratings
Units
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltage
VGES
±20 V
Ic
Continuous
Tc=25oC
Tc=80oC
150
100
Collector current
Icp
1ms
Tc=25oC
Tc=80oC
300
200
A
-Ic 100
-Ic pulse
1ms
200
Collector Power Dissipation
Pc 1 device
520 W
Junction temperature
Storage temperature
Tj
Tstg
+150
-40 to +125
oC
Isolation between terminal and copper base (*1)
voltage between thermistor and others (*2)
Viso
AC : 1min.
2500
VAC
Screw
Torque
Mounting (*3)
-
3.5 N m
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5 to 3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25oC unless otherwise specified )
It em s
Sym b o l s
Conditions
Characteristics
min. typ. max.
Zero gate voltage
collector current
ICES
VCE=1200V
VGE=0V
- - 1.0
Gate-Emitter
leakage current
IGES
VCE=0V
VGE=±20V
- - 200
Gate-Emitter
threshold voltage
VGE(th)
VCE=20V
Ic=100mA
4.5 6.5 8.5
VCE(sat) Ic=100A
Tj=25oC
-
2.25 a 2.60
Collector-Emitter
(terminal) VGE=15V
Tj=125oC
-
2.45
-
saturation voltage
VCE(sat)
Tj=25oC
-
1.90 2.05
(chip)
Tj=125oC
-
2.10
-
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz -
11
-
ton Vcc=600V
- 0.32 1.20
Turn-on time
tr Ic=100A
- 0.10 0.60
tr(i) VGE=±15V
- 0.03
-
Turn-off time
toff RG=5.6Ω
tf
- 0.41 1.00
- 0.07 0.30
VF
IF=100A
Tj=25oC
-
2.00 a 2.30
Forward on voltage
(terminal)
VF
VGE=0V
Tj=125oC
Tj=25oC
-
-
2.10 -
1.65 1.80
(chip)
Tj=125oC
-
1.75
-
Reverse recovery time
trr
IF=100A
- - 0.35
Lead resistance,
terminal-chip (*4)
R lead
- 3.40
-
Resistance
R
T=25oC
T=100oC
- 5000
465 495
-
520
B value
B T=25/50oC
3305
3375
3450
(*4) Biggest internal terminal resistance among arm.
Units
mA
nA
V
V
nF
us
V
us
mΩ
Ω
K
MS5F 6192
a
4
14
H04-004-03a

4페이지










6MBI100U4B-120-50 전자부품, 판매, 대치품
13. Reliability test results
Reliability Test Items
Test
cate-
gories
Test items
1 Terminal Strength
(Pull test)
2 Mounting Strength
Test methods and conditions
Pull force
Test time
Screw torque
Test time
: 20N
: 10±1 sec.
: 2.5 ~ 3.5 Nm (M5)
: 10±1 sec.
3 Vibration
4 Shock
5 Solderabitlity
6 Resistance to
Soldering Heat
1 High Temperature
Storage
2 Low Temperature
Storage
3 Temperature
Humidity
Storage
4 Unsaturated
Pressurized Vapor
5 Temperature
Cycle
Range of frequency : 10 ~ 500Hz
Sweeping time
: 15 min.
Acceleration
: 100m/s2
Sweeping direction : Each X,Y,Z axis
Test time
: 6 hr. (2hr./direction)
Maximum acceleration : 5000m/s2
Pulse width
: 1.0msec.
Direction
: Each X,Y,Z axis
Test time
: 3 times/direction
Solder temp.
: 245±5
Immersion time
: 5±0.5sec.
Test time
: 1 time
Solder Alloy
: Sn-Ag-Cu
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
Solder temp.
: 260±5
Immersion time
: 10±1sec.
Test time
: 1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
Storage temp.
: 125±5
Test duration
: 1000hr.
Storage temp.
: -40±5
Test duration
: 1000hr.
Storage temp.
: 85±2
Relative humidity
: 85±5%
Test duration
: 1000hr.
Test temp.
: 120±2
Test humidity
: 85±5%
Test duration
: 96hr.
Test temp.
: Low temp. -40±5
High temp. 125 ±5
6 Thermal Shock
Dwell time
Number of cycles
RT 5 ~ 35
: High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
: 100 cycles
Test temp.
+0
: High temp. 100 -5
+5
Low temp. 0 -0
Used liquid : Water with ice and boiling water
Dipping time
: 5 min. par each temp.
Transfer time
: 10 sec.
Number of cycles
: 10 cycles
Reference norms
EIAJ ED-4701
(Aug.-2001 edition)
Test Method 401
Method
Test Method 402
method
Number Accept-
of ance
sample number
5 (0:1)
5 (0:1)
Test Method 403
Reference 1
Condition code B
5 (0:1)
Test Method 404
Condition code B
5 (0:1)
Test Method 303
5 (0:1)
Test Method 302
Condition code A
5 (0:1)
Test Method 201
Test Method 202
Test Method 103
Test code C
Test Method 103
Test code E
Test Method 105
5 (0:1)
5 (0:1)
5 (0:1)
5 (0:1)
5 (0:1)
Test Method 307
method
Condition code A
5 (0:1)
MS5F 6192
7a
14
H04-004-03a

7페이지


구       성 총 14 페이지수
다운로드[ 6MBI100U4B-120-50.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
6MBI100U4B-120-50

Power Devices (IGBT)

ETC
ETC
6MBI100U4B-120-50

IGBT Module

Fuji Electric
Fuji Electric

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵