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4MBI200T-060 데이터시트 PDF




Fuji Electric에서 제조한 전자 부품 4MBI200T-060은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 4MBI200T-060 기능
기능 IGBT Module
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4MBI200T-060 데이터시트, 핀배열, 회로
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
IGBT Module
4MBI200T-060
MS5F 05498
Jun 16 03 K.Muramatsu
Jun 17 03 T.Miyasaka T.Fujihira
K.Yamada
Fuji Electric Co.,Ltd.
Matsumoto Factory
MS5F 05498
1
14
H04-004-07




4MBI200T-060 pdf, 반도체, 판매, 대치품
3. Absolute Maximum Ratings ( at Tc= 25unless otherwise specified
Items
Symbols
Conditions
Collector-Emitter voltage
Gate-Emitter voltage
VCES
VGES
Ic=1mA
Ic Duty=100 %
Collector current
Collector Power Dissipation
Junction temperature
Ic pulse
IF
IF pulse
Pc
Tj
1ms
Duty=50 %
1ms
1 device
Storage temperature
Tstg
Isolation voltage(*1)
Viso
AC : 1min.
Screw Torque
Mounting(*2)
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5~3.5 N m (M5)
Maximum
Ratings
600
±20
200
400
200
400
540
150
-40~ +125
2500
3.5
Units
V
V
A
W
V
Nm
4. Electrical characteristics ( at Tj= 25unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage
Collector current
Gate-Emitter leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Allowable avalance energy
during short curcuit cuting off
(Non-repetitive)
Resistance
B value
ICES VGE =
0 V, VCE = 600 V
IGES VCE =
0 V, VGE = ±20 V
VGE(th) VCE = 20 V, Ic =
200 mA
VCE(sat)
(Terminal) VGE =
VCE(sat) Ic =
(Chip)
Cies VGE =
Coes VCE =
Cres f =
ton Vcc =
tr Ic =
tr(i) VGE =
toff RG =
tf
VF
(Terminal) IF =
VF
(Chip)
trr IF =
15 V
200 A
0V
10 V
1 MHz
300 V
200 A
±15 V
16
200 A
200 A
Tj = 25
Tj = 125
Tj = 25
Tj = 125
Tj = 25
Tj = 125
Tj = 25
Tj = 125
PAV Ic > 400A, Tj = 125
R T = 25
T = 100
B T = 25/50
Characteristics
min. typ. Max.
- - 1.0
- - 200
6.2 6.7 7.7
- 2.4 2.8
- 2.6 -
- 1.9 -
- 2.1 -
- 15000 -
- 2600 -
- 2250 -
- 0.35 1.2
- 0.2 0.6
- 0.1 -
- 0.5 1.2
- 0.05 0.45
- 2.3 2.7
- 2.2 -
- 1.8 -
- 1.7 -
- - 0.35
100 -
-
-
465
3305
5000
495
3375
-
520
3450
Units
mA
nA
V
V
pF
μs
V
μs
mJ
K
5. Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
min. typ. Max.
Thermal resistance
(1 device)
Contact Thermal resistance (1 device)
Rth(j-c)
Rth(c-f)
IGBT
FWD
With thermal compound *
- - 0.23
- - 0.44
- 0.05 -
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
Units
℃/W
MS5F 05498
4
14
H04-004-03

4페이지










4MBI200T-060 전자부품, 판매, 대치품
12. Reliability test results
Reliability Test Items
Test
cate-
gories
Test items
Test methods and conditions
1 Terminal Strength
(Pull test)
2 Mounting Strength
3 Vibration
4 Shock
5 Solderabitlity
6 Resistance to
Soldering Heat
1 High Temperature
Storage
2 Low Temperature
Storage
3 Temperature
Humidity
Storage
4 Unsaturated
Pressure Cooker
5 Temperature
Cycle
Pull force
: 20N
Test time
: 10±1 sec.
Screw torque
: 2.5 ~ 3.5 Nm (M5)
Test time
: 10±1 sec.
Range of frequency : 10 ~ 500Hz
Sweeping time
: 15 min.
Acceleration
Sweeping direction
: 200m/s2
: Each X,Y,Z axis
Test time
: 6 hr. (2hr./direction)
Maximum acceleration : 5000m/s2
Pulse width
: 1.0msec.
Direction
: Each X,Y,Z axis
Test time
: 3 times/direction
Solder temp.
: 235±5
Immersion time
: 5±0.5sec.
Test time
: 1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
Solder temp.
: 260±5
Immersion time
: 10±1sec.
Test time
: 1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
Storage temp.
: 125±5
Test duration
: 1000hr.
Storage temp.
: -40±5
Test duration
: 1000hr.
Storage temp.
: 85±2
Relative humidity
: 85±5%
Test duration
: 1000hr.
Test temp.
: 120±2
Atmospheric pressure : 1.7 × 105 Pa
Test humidity
: 85±5%
Test duration
: 96hr.
Test temp.
: Low temp. -40±5
High temp. 125 ±5
6 Thermal Shock
Dwell time
Number of cycles
RT 5 ~ 35
: High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
: 100 cycles
Test temp.
+0
: High temp. 100 -5
+5
Low temp. 0 -0
Used liquid : Water with ice and boiling water
Dipping time
: 5 min. par each temp.
Transfer time
: 10 sec.
Number of cycles
: 10 cycles
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of sample
Accept-
ance
number
Test Method 401 5 ( 0 : 1 )
Method
Test Method 402 5 ( 0 : 1 )
method
Test Method 403 5 ( 0 : 1 )
Reference 1
Condition code B
Test Method 404 5 ( 0 : 1 )
Condition code B
Test Method 303 5 ( 0 : 1 )
Condition code A
Test Method 302 5 ( 0 : 1 )
Condition code A
Test Method 201 5 ( 0 : 1 )
Test Method 202 5 ( 0 : 1 )
Test Method 103 5 ( 0 : 1 )
Test code C
Test Method 103 5 ( 0 : 1 )
Test code E
Test Method 105 5 ( 0 : 1 )
Test Method 307 5 ( 0 : 1 )
method
Condition code A
MS5F 05498
7
14
H04-004-03

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부품번호상세설명 및 기능제조사
4MBI200T-060

IGBT Module

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