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PDF 2MBI600U4G-120 Data sheet ( Hoja de datos )
| Número de pieza | 2MBI600U4G-120 | |
| Descripción | IGBT Module | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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http://www.fujielectric.com/products/semiconductor/
2MBI600U4G-120
IGBT MODULE (U series)
1200V / 600A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Symbols
VCES
Conditions
Gate-Emitter voltage
VGES
Ic Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Mounting (*2)
M6
Screw torque Terminals (*3)
M8
M4
1ms
1 device
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : Mounting 4.25~5.75 Nm (M6)
Note *3: Recommendable Value : Main Terminals 8~10 Nm (M8)
Sense Terminals 1.7~2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on
Turn-off
Forward on voltage
Reverse recovery
Lead resistance, terminal-chip (*4)
Note *4: Biggest internal terminal resistance among arm.
Symbols Conditions
ICES VGE = 0V, VCE = 1200V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 600mA
VCE (sat)
Tj=25°C
(main terminal) VGE = 15V
Tj=125°C
VCE (sat)
IC = 600A
Tj=25°C
(chip)
Tj=125°C
Cies
VCE = 10V, VGE = 0V, f = 1MHz
ton VCC = 600V RGon = 6.8Ω
tr
IC = 600A
RGoff = 2Ω
toff VGE = ±15V
tf Tj = 125ºC
VF Tj=25°C
(main terminal) VGE = 0V
Tj=125°C
VF IF = 600A
Tj=25°C
(chip)
Tj=125°C
trr IF = 600A
R lead
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Contact thermal resistance (1device)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound (*5)
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
IGBT Modules
Maximum ratings
1200
±20
800
600
1600
1200
600
1200
3670
150
-40 ~ +125
4000
5.75
10
2.5
Units
V
V
A
W
°C
VAC
Nm
Characteristics
min. typ. max.
- - 1.0
- - 1200
5.5 6.5 7.5
- 2.08 2.26
- 2.28 -
- 1.90 2.05
- 2.10 -
- 68 -
- 1.35 -
- 0.65 -
- 0.80 -
- 0.20 -
- 1.83 2.01
- 1.93 -
- 1.65 1.80
- 1.75 -
- 0.45 -
- 0.29 -
Units
mA
nA
V
V
nF
µs
V
μs
mΩ
Characteristics
min. typ. max.
- - 0.034
- - 0.060
- 0.006 -
Units
°C/W
1
1 page  
2MBI600U4G-120
Outline Drawings, mm
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Equivalent Circuit Schematic
main emitter
sense emitter
main collector
sense collector
gate
sense collector
gate
sense emitter
main collector main emitter
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2MBI600U4G-120.PDF ] | |
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