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2MBI450VJ-120-50 데이터시트 PDF




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기능 IGBT Module
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2MBI450VJ-120-50 데이터시트, 핀배열, 회로
2MBI450VJ-120-50
IGBT MODULE (V series)
1200V / 450A / 2 in one package
http://www.fujisemi.com
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Symbols
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Ic
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Mounting (*3)
Screw torque Terminals (*4)
-
PC-Board (*5)
Conditions
Continuous
1ms
1ms
1 device
Tc=80°C
Tc=80°C
AC : 1min.
Maximum ratings
1200
±20
450
900
450
900
2270
175
150
125
-40 to +125
2500
3.5
4.5
0.6
Units
V
V
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5) Note *4: Recommendable value : 3.5-4.5 Nm (M6)
Note *5: Recommendable value : 0.4-0.6 Nm (M2.5)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R
B
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 450mA
Tj=25°C
Tj=125°C
VGE = 15V
Tj=150°C
IC = 450A
Tj=25°C
Tj=125°C
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V
IC = 450A
VGE = ±15V
RG = 0.52Ω
VGE = 0V
IF = 450A
IF = 450A
T=25°C
T=100°C
T=25/50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min. typ. max.
- - 3.0
- - 600
6.0 6.5 7.0
- 2.25 2.70
- 2.55 -
- 2.60 -
- 1.75 2.20
- 2.05 -
- 2.10 -
- 41 -
- 550 1200
- 180 600
- 120 -
- 1050 2000
- 110 350
- 2.20 2.65
- 2.35 -
- 2.30 -
- 1.70 2.15
- 1.85 -
- 1.80 -
- 200 600
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
nF
nsec
V
nsec
K
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Contact thermal resistance (1device) (*6)
Rth(j-c)
Rth(c-f)
Inverter IGBT
Inverter FWD
with Thermal Compound
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
Characteristics
min. typ. max.
- - 0.066
- - 0.100
- 0.0167 -
Units
°C/W




2MBI450VJ-120-50 pdf, 반도체, 판매, 대치품
2MBI450VJ-120-50
IGBT Modules
http://www.fujisemi.com
[INVERTER]
Forward Current vs. Forward Voltage (typ.)
chip
1000
800
Tj=25°C
600
400
200
0
0
125°C
150°C
12
Forward on voltage: VF [V]
3
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=0.52, Tj=125°C, 150°C
10000
Tj=125oC
Tj=150oC
1000
Irr
trr
100
10
0
200 400 600 800
Forward current: IF [A]
1000
[THERMISTOR]
Temperature characteristic (typ.)
100
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=0.52, Tj=25°C
10000
1000
100
Irr
trr
10
0
200 400 600 800
Forward current: IF [A]
1000
Transient Thermal Resistance (max.)
1
FWD
0.1
IGBT
0.01
0.001
0.001
0.01 0.1
Pulse Width : Pw [sec]
1
10
1
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
Temperature [°C]
4

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2MBI450VJ-120-50

Power Devices (IGBT)

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2MBI450VJ-120-50

IGBT Module

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