|
|
|
부품번호 | 2MBI550VN-170-50 기능 |
|
|
기능 | IGBT Module | ||
제조업체 | Fuji Electric | ||
로고 | |||
http://www.fujielectric.com/products/semiconductor/
2MBI550VN-170-50
IGBT Modules
IGBT MODULE (V series)
1700V / 550A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
IC
Collector current
IC pulse
-IC
-IC pulse
Collector power dissipation
PC
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Screw torque
Mounting (*3)
Terminals (*4)
-
-
Conditions
Continuous
1ms
1ms
1 device
TC=25°C
TC=100°C
AC : 1min.
Maximum ratings
1700
±20
750
550
1100
550
1100
3750
175
150
-40 ~ 125
3400
3.5
4.5
Units
V
V
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : 2.5-3.5 Nm (M5)
Note *4: Recommendable Value : 3.5-4.5 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
RG (int)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R
B
Conditions
VGE = 0V, VCE = 1700V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 550mA
Tj=25°C
Tj=125°C
VGE = 15V
Tj=150°C
IC = 550A
Tj=25°C
Tj=125°C
Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 900V
IC = 550A
VGE = ±15V
RG = 3.3Ω
LS = 80nH
Tj=25°C
Tj=125°C
VGE = 0V
Tj=150°C
IF = 550A
Tj=25°C
Tj=125°C
Tj=150°C
IF = 550A
T = 25°C
T = 100°C
T = 25/50°C
Characteristics
min. typ. max.
- - 3.0
- - 600
6.0 6.5 7.0
- 2.90 3.35
- 3.45 -
- 3.55 -
- 2.15 2.60
- 2.70 -
- 2.80 -
- 1.67 -
- 40 -
- 1000 -
- 500 -
- 120 -
- 1300 -
- 100 -
- 2.70 3.15
- 3.00 -
- 2.95 -
- 1.95 2.40
- 2.25 -
- 2.20 -
- 250 -
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
Ω
nF
nsec
V
nsec
Ω
K
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance(1device)
Contact thermal resistance (1device) (*5)
Rth(j-c)
Rth(c-f)
Inverter IGBT
Inverter FWD
with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 0.04
- - 0.06
- 0.0167 -
Units
°C/W
1
2MBI550VN-170-50
[INVERTER]
Forward Current vs. Forward Voltage (typ.)
chip
1200
Tj=25°C 150°C
1000
125°C
800
600
400
200
0
01234
Forward on voltage: VF [V]
[INVERTER]
Reverse Recovery Characteristics (typ.)
VCC=900V, VGE=±15V, RG=3.3Ω, Tj=125°C, 150°C
1000
Irr
trr
100
Tj=125 oC
Tj=150 oC
10
0
200 400 600 800 1000 1200
Forward current: IF [A]
[THERMISTOR]
Temperature characteristic (typ.)
100
10
1
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
Temperature [°C]
4
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
Reverse Recovery Characteristics (typ.)
VCC=900V, VGE=±15V, RG=3.3Ω, Tj=25°C
1000
Irr
100
trr
10
0
200 400 600 800 1000 1200
Forward current: IF [A]
Transient Thermal Resistance (max.)
1
τ [sec] 0.0023 0.0301 0.0598 0.0708
Rth IGBT 0.00429 0.01088 0.01537 0.00946
[°C/W] FWD 0.00644 0.01632 0.02305 0.01420
0.1 FWD
IGBT
0.01
0.001
0.001
0.01 0.1
Pulse Width : Pw [sec]
1
FWD safe operating area (max.)
Tj=150°C
1200
1000
800
Pmax=687kW
600
Notice)
400 Switching characteristics of VCE
is defined between Sense C and
200
Sense E1 for Upper arm and
Sense E1 and Sense E2 for
Lower arm .
0
0
500
1000
1500
Collector-Emitter voltage: VCE [V]
2000
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ 2MBI550VN-170-50.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2MBI550VN-170-50 | Power Devices (IGBT) | ETC |
2MBI550VN-170-50 | IGBT Module | Fuji Electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |