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PDF 2MBI225U4N-120-50 Data sheet ( Hoja de datos )
| Número de pieza | 2MBI225U4N-120-50 | |
| Descripción | IGBT Module | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2MBI225U4N-120-50 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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SPECIFICATION
Device Name :
Type Name :
IGBT MODULE
(RoHS compliant product)
2MBI225U4N-120-50
Spec. No. :
MS5F 6508
Feb. 14 ’06 H.Kaneda
Feb. 14 ’06 M.W atanabe T.Miyasaka
K.Yamada
MS5F6508
1a
14
H04-004-07b
1 page  
6.Recommend way of module mounting to Heat sink Clamping
(1) Initial : 1/3 specified torque, sequence (1)→(2)→(3)→(4)
(2) Final ：Full specified torque (3.5 Nm),sequence(4)→(3)→(2)→(1)
(3) (1)
(2) (4)
Mounting holes
Heat sink
Module
7. Indication on module
Logo of production
Lot.No.
2M BI 225U4N-120-50
225A 1200V
Place of manufacturing (code)
8. Applicable category
This specification is applied to IGBT-Module named 2MBI225U4N-120-50.
9. Storage and transportation notes
• The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% .
Be careful to solderability of the terminals if the module has passed over one
year from manufacturing date, under the above storage condition.
• Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
• Avoid exposure to corrosive gases and dust.
• Avoid excessive external force on the module.
• Store modules with unprocessed terminals.
• Do not drop or otherwise shock the modules when transporting.
10. Definitions of switching time
RG
V GE
L
V CE
Ic
0V
V GE
VCE
V cc
0V Ic
0A
11. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
90%
tr r
90%
Ir r Ic
10% 10%
tr ( i )
tr
to n
VCE
to f f
0V
90%
10%
tf
MS5F6508
5a
14
H04-004-03a
5 Page 
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=3.0Ω, Tj=25oC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=3.0Ω, Tj=125oC
10000
1000
100
toff
ton tr
tf
10
0
100 200 300
Collector current : Ic [ A ]
400
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=225A, VGE=±15V, Tj=25oC
10000
1000
ton
toff
tr
100
10
0.1
tf
1.0 10.0
Gate resistance : RG [ Ω ]
100.0
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=225A, VGE=±15V, Tj=125oC
40
Eoff
30
Eon
20
10
0
0.1
Err
1.0 10.0
Gate resistance : RG [ Ω ]
100.0
1000
100
ton
toff
tr
tf
10
0
100 200 300
Collector current : Ic [ A ]
400
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=3.0Ω
40
Eoff(125oC)
30
Err(125oC)
20 Eoff(25oC)
Eon(125oC)
Err(25oC)
10
Eon(25oC)
0
0 75 150 225 300 375 450
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 3.0Ω, Tj <= 125oC
Stray inductance <= 100nH
600
450
300
150
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
MS5F6508
11 a
14
H04-004-03a
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet 2MBI225U4N-120-50.PDF ] | |
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