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부품번호 | JHW5N60B 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | Jin-ec Electronic | ||
로고 | |||
Shanghai Jin-ec Electronic& Technology Co., Ltd
JHW5N60
N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
主要参数 MAIN CHARACTERISTICS
封装 Package
ID A
VDSS 600 V
Rdson(@Vgs=10V) 2.5Ω
Qg 27 nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 14pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 14pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
JHW5N60V-O-V-N-B
JHW5N60R-O-R-N-B
JHW5N60S-O-S-N-B
JHW5N60B-O-B-N-B
JHW5N60C-O-C-N-B
JHW5N60F-O-F-N-B
JHW5N60V
JHW5N60R
JHW5N60S
JHW5N60B
JHW5N60C
JHW5N60F
封装
Package
IPAK
DPAK
TO-263
TO-262
TO-220C
TO-220MF
无卤素 包 装
Halogen Free Packaging
否 NO
否 NO
否 NO
否 NO
否 NO
否 NO
条管 Tube
条管 Tube
条管 Tube
条管 Tube
条管 Tube
条管 Tube
器件重量
Device
Weight
0.35 g(typ)
0.30 g(typ)
1.37 g(typ)
1.71 g(typ)
2.15 g(typ)
2.20 g(typ)
1/13
JHW5N60
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
td(on)
tr
VDD=300V,ID=4.5A,RG=25Ω - 20 50 ns
(note 4,5)
- 55 120 ns
延迟时间 Turn-Off delay time
td(off)
- 70 150 ns
下降时间 Turn-Off Fall time
tf
- 55 120 ns
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
Qg
Qgs
Qgd
VDS =480V ,
ID=4.5A
VGS =10V (note 4,5)
- 27 30
- 3.6 -
- 13.1 -
nC
nC
nC
漏 - 源 二 极 管 特 性 及 最 大 额 定 值 Drain-Source Diode C haracteristics and Ma ximum
Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS - - 4.5 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM - - 18 A
正向压降
Drain-Source Diode Forward VSD VGS=0V, IS=4.5A
Voltage
- - 1.4 V
反向恢复时间
Reverse recovery time
反向恢复电荷
Reverse recovery charge
trr VGS=0V, IS=4.5A
- 300 - ns
Qrr dIF/dt=100A/μs (note 4) - 2.2 - μC
热特性 THERMAL CHARACTERISTIC
项目
Parameter
最大
符号
单位
Symbol Max Unit
JHW5N60V/RJHW5N60S/B/CJHW5N60F
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
2.50
1.25 3.79 ℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
83
62.5 62.5 ℃/W
注释:
1:脉冲宽度由最高结温限制
2:L=25mH, IAS=4.5A, VDD=50V, RG=25 Ω,起始结
温 TJ=25℃
3:ISD ≤4.5A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1:Pulse width limited by maximum junction
temperature
2 : L=25mH, IAS=4.5A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3 : ISD ≤4.5A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
4/13
4페이지 特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JHW5N60V/R
JHW5N60
Transient Thermal Response Curve
For JHW5N60S/B/C
Transient Thermal Response Curve
For JHW5N60F
7/13
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ JHW5N60B.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
JHW5N60 | N-CHANNEL MOSFET | Jin-ec Electronic |
JHW5N60B | N-CHANNEL MOSFET | Jin-ec Electronic |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |