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부품번호 | BGU6104 기능 |
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기능 | Wideband silicon low-noise amplifier MMIC | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 20 페이지수
BGU6104
Wideband silicon low-noise amplifier MMIC
Rev. 2 — 3 February 2012
Product data sheet
1. Product profile
1.1 General description
The BGU6104 MMIC is an unmatched wideband MMIC featuring an integrated bias,
enable function and wide supply voltage. BGU6104 is part of family of three products
(BGU6101, BGU6102 and BGU6104) and is optimized for 4 mA operation.
1.2 Features and benefits
Supply voltage range from 1.5 V to 5 V
Current range up to 40 mA at 3 V and 50 mA at 5 V supply voltage
NFmin of 0.8 dB
Applicable between 40 MHz and 4 GHz
Integrated temperature stabilized bias for easy design
Bias current configurable with external resistor
Power-down mode current consumption < 6 A
ESD protection on all pins up to 3 kV HBM
Small 6-pin leadless package 2.0 mm 1.3 mm 0.35 mm
1.3 Applications
FM radio
Mobile TV, CMMB
ISM
Wireless security
RKE, TPMS
AMR, ZigBee, Bluetooth
WiFi, WLAN(2.4 GHz)
Low current applications
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 6.0 mA; VENABLE 1.2 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ Max Unit
s212
insertion power gain
f = 450 MHz
f = 900 MHz
- 22.5 -
- 18.5 -
dB
dB
NFmin minimum noise figure
f = 2400 MHz; ICC(tot) = 12 mA
f = 450 MHz
f = 900 MHz
-
-
-
12.8 -
0.8 -
0.8 -
dB
dB
dB
f = 2400 MHz; ICC(tot) = 12 mA - 1.1 -
dB
NXP Semiconductors
BGU6104
Wideband silicon low-noise amplifier MMIC
7. Static characteristics
Table 7.
Symbol
VCC
ICC(tot)
Static characteristics
Parameter
supply voltage
total supply current
Tamb
ambient temperature
[1] ICC(tot) = ICC + IRF_OUT + IR_BIAS.
[2] Configurable with external resistor.
Conditions
RF input AC coupled
VCC = 3.0 V
VENABLE 0.4 V
Min Typ Max Unit
1.5 - 5.0 V
[1][2] 3.7 -
40 mA
[1] - - 0.01 mA
40 +25 +85 C
BGU6104
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
© NXP B.V. 2012. All rights reserved.
4 of 20
4페이지 NXP Semiconductors
BGU6104
Wideband silicon low-noise amplifier MMIC
Table 8. Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ Max Unit
450 MHz frequency
s212 insertion power gain
MSG maximum stable gain
f = 450 MHz
ICC(tot) = 4 mA
ICC(tot) = 6 mA
ICC(tot) = 12 mA
ICC(tot) = 20 mA
ICC(tot) = 40 mA
f = 450 MHz
-
-
-
-
-
20.0 -
22.5 -
25.5 -
27.5 -
28.5 -
dB
dB
dB
dB
dB
NFmin
PL(1dB)
IP3O
minimum noise figure
output power at 1 dB gain compression
output third-order intercept point
ICC(tot) = 4 mA
ICC(tot) = 6 mA
ICC(tot) = 12 mA
ICC(tot) = 20 mA
ICC(tot) = 40 mA
f = 450 MHz
ICC(tot) = 4 mA
ICC(tot) = 6 mA
ICC(tot) = 12 mA
ICC(tot) = 20 mA
ICC(tot) = 40 mA
f = 450 MHz
ICC(tot) = 4 mA
ICC(tot) = 6 mA
ICC(tot) = 12 mA
ICC(tot) = 20 mA
ICC(tot) = 40 mA
f = 450 MHz
ICC(tot) = 4 mA
ICC(tot) = 6 mA
ICC(tot) = 12 mA
ICC(tot) = 20 mA
ICC(tot) = 40 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
23.0 -
24.5 -
27.0 -
29.0 -
30.5 -
0.8 -
0.8 -
0.8 -
0.9 -
1.2 -
2.0 -
0.5 -
5.5 -
10.0 -
15.5 -
9.0 -
11.0 -
17.0 -
20.5 -
26.0 -
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
BGU6104
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
© NXP B.V. 2012. All rights reserved.
7 of 20
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부품번호 | 상세설명 및 기능 | 제조사 |
BGU6101 | Wideband silicon low-noise amplifier MMIC | NXP Semiconductors |
BGU6102 | Wideband silicon low-noise amplifier MMIC | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |