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PDF CS8N65FA9H Data sheet ( Hoja de datos )
| Número de pieza | CS8N65FA9H | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | HUAJING MICROELECTRONICS | |
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Huajing Discrete Devices
Silicon N-Channel Power MOSFET
○R
CS8N65F A9H
General Description：
CS8N65F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
650
8
45
0.9
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤1.3Ω)
l Low Gate Charge (Typical Data:28nC)
l Low Reverse transfer capacitances(Typical:14pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
Drain-to-Source Voltage
650
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
8
5.5
32
±30
500
40
2.8
5.0
PD
TJ，Tstg
TL
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
45
0.36
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012
1 page  
Huajing Discrete Devices
○R CS8N65F A9H
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
VGS=10V
1
1.00E-05
1.00E-04
14
12 PULSED TEST
VDS=30V
10
8
6
1.00E-03
Figure 6
1.00E-02
1.00E-01
t Pulse Width , Seconds
Maximun Peak Current Capability
4
3
2
1.00E+00
1.00E+01
ID= 8A
ID= 4A
ID= 2A
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
4
2
0
02
Figure 7
4 6 8 10
Vgs , Gate to Source Voltage ， Volts
Typical Transfer Characteristics
1.2
PULSED TEST
Tc =25 ℃
1.1
1
0
12 4 6 8 10 12 14
Vgs , Gate to Source Voltage，Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
PULSED TEST
2.5 VGS=10V ID=2.5A
2
1 VGS=10V
1.5
0.9
1
0.8 0.5
0.7 0
0123456
Id , Drain Current , Amps
-100 -50
0
50 100 150 200
Tj, Junction temperature ,C
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2012
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS8N65FA9H.PDF ] | |
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