C2062S Datasheet PDF - ROHM Semiconductor
| Part Number | C2062S | |
| Description | NPN Transistor - 2SC2062S | |
| Manufacturers | ROHM Semiconductor | |
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Transistors
2SC2062S
High-gain Amplifier Transistor (32V, 0.3A)
2SC2062S
zFeatures
1) Darlington connection for a high hFE.
(DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.)
2) High input impedance.
zAbsolute maximum ratings (Ta=25°C)
C
B
zExternal dimensions (Unit : mm)
SPT
4.0 2.0
(1)Emitter
(2)Collector
(3)Base
0.45
2.5
5.0
(1) (2) (3)
0.5 0.45
Taping specifications
E : Emitter
C : Collector
B : Base
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
VCBO
VCES
40
32
Emitter-base voltage
Collector current
Collector power dissipation
VEBO
IC
PC
12
0.3
0.3
Junction temperature
Tj 150
Storage temperature
Tstg
−55 to +150
Unit
V
V
V
A
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCES
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current transfer ratio
hFE
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
Output capacitance
∗ Transition frequency of the device.
Cob
Min.
40
32
12
−
−
10000
−
−
−
Typ.
−
−
−
−
−
−
−
200
2.5
Max.
−
−
−
0.1
0.1
−
1.4
−
−
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
IC=100µA
IC=10mA
IE=100µA
VCB=30V
VEB=12V
VCE/IC=3V/0.1A
IC/IB=200mA/0.2mA
VCE=5V , IE= −10mA , f=100MHz
VCB=10V , IE=0A , f=1MHz
zPackaging specifications and hFE
Type
2SC2062S
Package
hFE
SPT
C
Code
Basic ordering unit (pieces)
TP
5000
∗
Rev.A
1/2
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for C2062S electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ C2062S.PDF Datasheet ] | |
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