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PDF STD25NF10LA Data sheet ( Hoja de datos )
| Número de pieza | STD25NF10LA | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD25NF10LA
N-channel 100 V, 0.030 Ω, 25 A DPAK
STripFET™ II Power MOSFET
Features
Order code
STD25NF10LA
VDSS
100 V
RDS(on) max
< 0.035 Ω
ID
25 A
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Logic level device
Applications
■ Switching application
■ Automotive
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.
TAB
3
1
DPAK
Figure 1. Internal schematic diagram
D(TAB)
G(1)
Table 1. Device summary
Order code
Marking
STD25NF10LA
D25NF10LA
Package
DPAK
S(3)
AM09016v1
Packaging
Tape and reel
October 2011
Doc ID 022319 Rev 1
1/15
www.st.com
15
1 page  
STD25NF10LA
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 25 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 25 A, di/dt = 100 A/µs,
VDD = 50 V, Tj = 150 °C
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
25
100
1.5
88
317
7.2
A
A
V
ns
nC
A
Doc ID 022319 Rev 1
5/15
5 Page 
STD25NF10LA
Figure 19. DPAK (TO-252) drawing
Package mechanical data
Figure 20. DPAK footprint(a)
6.7
6.7
1.8 3 1.6
2.3
2.3
1.6
0068772_H
AM08850v1
a. All dimensions are in millimeters
Doc ID 022319 Rev 1
11/15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STD25NF10LA.PDF ] | |
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