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PDF DTC143TSA Data sheet ( Hoja de datos )

Número de pieza DTC143TSA
Descripción NPN Small Signal Transistor
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! DTC143TSA Hoja de datos, Descripción, Manual

DTC143 TM/TE/TUA/TCA/TSA
NPN Small Signal Transistor
Small Signal Diode
Features
—Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
—The bias resistors consist of thin -film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
—Only the on/off conditions need to be set for
operation,marking device design easy.
— Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code.
Ordering Information
Package
SOT-723
SOT-523
SOT-323
SOT-23
TO-92S
Part No.
DTC143 TM
DTC143 TE
DTC143 TUA
DTC143 TCA
DTC143 TSA
Packing
8K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
Marking
03
03
03
03
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Type Number
Power Dissipation
Collector-Emitter Voltage
Emitter-Base Voltage
Emitter-base voltage
Collector Current
Junction and Storage Temperature Range
Symbol
PD
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
TJ, TSTG
TM TE
100 150
Notes:1. Valid provided that electrodes are kept at ambient temperature
Value
TUA TCA
200
50
50
5
100
-55 to + 150
TSA Units
300 mW
V
V
V
mA
°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min
50
50
5
IEBO
VCE(sat)
hFE
R1
fT
100
3.29
Typ
4.7
250
Max
0.5
Condtion
Ic=50µA
Ic=1mA
IE=50µA
VCB=50V
0.5 VEB=4V
0.3
600
6.11
IC=5mA,IB=0.25mA
VCE=5V,IC=1mA
VCE=10V,IE=5mA, f=100MHz
Unit
V
V
V
μA
μA
V
K
MHz
Version:A12

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