(PDF) C5824 Datasheet - NPN Transistor

Número de pieza	C5824
Descripción	NPN Transistor - 2SC5824
Fabricantes	ROHM Semiconductor
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No Preview Available ! Transistor Power transistor (60V, 3A) 2SC5824 2SC5824 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071. !External dimensions (Units : mm) MPT3 4.0 1.0 2.5 (1) 0.5 (2) (3) !Applications NPN Silicon epitaxial planar transistor (1)Base(Gate) Each lead has same dimensions (2)Collector(Drain) (3)Emitter(Sourse) Abbreviated symbol : UP !Structure Low frequency amplifier High speed switching !Packaging specifications Type 2SC5824 Package Code Basic ordering unit (pieces) Taping T100 1000 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP Power dissipation PC PC Junction temperature Tj Range of storage temperature Tstg ∗1 Pw=100ms ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 40x40x0.7(mm) ceramic substrate Limits 60 60 6 3 6 500 2.0 150 −55~+150 Unit V V V A A ∗1 mW ∗2 W ∗3 °C °C 1/3 1 page

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PDF C5824 Data sheet ( Hoja de datos )