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MDF8N60 PDF 데이터시트 ( Data , Function )

부품번호 MDF8N60 기능
기능 N-Channel MOSFET
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MDF8N60 데이터시트, 핀배열, 회로
MDF8N60
N-Channel MOSFET 600V, 8A, 1.0
General Description
The MDF8N60 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF8N60 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
VDS = 600V
VDS = 660V
ID = 8.0A
RDS(ON) ≤ 1.0Ω
Applications
@ Tjmax
@ VGS = 10V
@ VGS = 10V
Power Supply
PFC
High Current, High Speed Switching
G DS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Characteristics
Continuous Drain Current ()
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy EAR(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
Dv/dt
EAS
TJ, Tstg
Rating
600
660
±30
8.0
4.9
32
46
0.37
4.6
4.5
320
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Nov2009. Version 2.2
1
Symbol
RθJA
RθJC
Rating
62.5
2.71
Unit
oC/W
MagnaChip Semiconductor Ltd.




MDF8N60 pdf, 반도체, 판매, 대치품
10 Note : ID = 8A
8
6
120V
300V
480V
4
2
0
0 2 4 6 8 10 12 14 16 18 20
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
101 1 ms
10 ms
1s 100 ms
100 DC
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TC=25
100 101 102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
single pulse
Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=2.71/W
10-4 10-3 10-2 10-1 100
t1, Rectangular Pulse Duration [sec]
101
Fig.11 Transient Thermal Response Curve
2000
1800
1600
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1400
1200
1000
Ciss
800
600
Crss
400
Notes ;
1. VGS = 0 V
2. f = 1 MHz
200
0
1
10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature []
Fig.10 Maximum Drain Current vs. Case
Temperature
16000
14000
12000
single Pulse
RthJC = 2.71/W
TC = 25
10000
8000
6000
4000
2000
0
1E-5 1E-4 1E-3 0.01
0.1
1
10
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation
Nov2009. Version 2.2
4 MagnaChip Semiconductor Ltd.

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