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부품번호 | K1069 기능 |
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기능 | MOSFET ( Transistor ) - 2SK1069 | ||
제조업체 | Sanyo | ||
로고 | |||
전체 3 페이지수
Ordering number:EN2749
N-Channel Junction Silicon FET
2SK1069
Low-Frequency
General-Purpose Amplifier Applications
Applications
· Low-frequency general-purpose amplifiers.
· Ideal for use in variable resistors, analog switches,
low-frequency amplifiers, and constant-current
circuits.
Features
· Adoption of FBET process.
· Ultrasmall-sized package permitting 2SK1069-
applied sets to be made smaller and slimmer.
Package Dimensions
unit:mm
2058
[2SK1069]
0.3
3
0.15
0 to 0.1
12
0.65 0.65
2.0
0.3 0.6
0.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=–10µA, VDS=0
Gate-to-Source Leakage Current
IGSS VGS=–20V, VDS=0
Zero-Gate Voltage Drain Current
IDSS VDS=10V, VGS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1µA
Forward Transfer Admittance
| yfs | VDS=10V, VGS=0, f=1kHz
* : The 2SK1069 is classified by IDSS as follows (unit : mA) :
1.2 3 3.0 2.5 4 6.0 5.0 5 12.0
(Note) Marking : FJ
IDSS rank : 3, 4, 5
• For CP package version, use the 2SK771.
1 : Source
2 : Drain
3 : Gate
SANYO : MCP
Ratings
40
–40
10
20
150
150
–55 to +150
Unit
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ max
Unit
–40 V
–1.0 nA
1.2* 12.0* mA
–0.3 –0.9 –2.0 V
4.5 9.0
mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51099TH (KT)/4298TA, TS No.2749–1/3
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구 성 | 총 3 페이지수 | ||
다운로드 | [ K1069.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
K1060 | MOSFET ( Transistor ) - 2SK1060 | NEC |
K1061 | MOSFET ( Transistor ) - 2SK1061 | Toshiba |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |