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PDF BSL306N Data sheet ( Hoja de datos )
| Número de pieza | BSL306N | |
| Descripción | Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSL306N (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS™2 Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen free according to IEC61249-2-21
BSL306N
Product Summary
VDS
RDS(on),max
ID
VGS=10 V
VGS=4.5 V
30 V
57 mW
93
2.3 A
PG-TSOP-6
6 54
1
23
Type
Package Tape and Reel Information
BSL306N TSOP-6
H6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified 1)
Marking
sPN
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
Avalanche energy, single pulse
E AS I D=2.3 A, R GS=25 W
Reverse diode dv /dt
Gate source voltage
Power dissipation1)
Operating and storage temperature
dv /dt
I D=2.3 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
V GS
P tot T A=25 °C
T j, T stg
ESD Class
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
1) Remark: one of both transistors active
Lead Free Packing
Yes Non dry
Value
2.3
1.8
9
10.8
Unit
A
mJ
6
±20
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
kV/µs
V
W
°C
Rev 2.4
page 1
2013-11-06
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
6
4.5 V
10 V
4V
4
3.5 V
3.3 V
2
3V
2.8 V
0
012
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
10
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
200
160
3.3 V
3.5 V
BSL306N
120
80 4 V
4.5 V
5V
40 10 V
0
3 024
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
6
10
8
88
66
25 °C
44
150 °C
2
2
0
012345
VGS [V]
0
0
Rev 2.4
page 5
246
ID [A]
8
2013-11-06
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSL306N.PDF ] | |
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