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PDF BSL308C Data sheet ( Hoja de datos )
| Número de pieza | BSL308C | |
| Descripción | Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSL308C (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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BSL308C
OptiMOS™ P3 + Optimos™ 2 Small Signal Transistor
Features
· Complementary P + N channel
· Enhancement mode
· Logic level (4.5V rated)
· Avalanche rated
· Qualified according to AEC Q101
· 100% Lead-free; RoHS compliant
· Halogen free according to IEC61249-2-21
Product Summary
VDS
RDS(on),max
ID
VGS=±10 V
VGS=±4.5 V
PN
-30 30 V
80 57 mW
130 93
-2.0 2.3 A
PG-TSOP-6
65
4
31
2
3
Type
BSL308C
Package
PG-TSOP6
Tape and Reel Information
H6327: 3000 pcs / reel
Marking
sPS
Lead Free
Yes
Packing
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified 1)
Parameter
Symbol Conditions
Continuous drain current
I D T A=25 °C
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation 2)
Operating and storage temperature
T A=70 °C
I D,pulse T A=25 °C
P: I D=-2.0 A,
E AS N: I D=2.3 A,
R GS=25 W
V GS
P tot T A=25 °C
T j, T stg
ESD class
JESD22-A114-HBM
Soldering temperature
T solder
IEC climatic category; DIN IEC 68-1
1) Remark: only one of both transistors active
Value
PN
-2.0 2.3
-1.6 1.8
-8.0 9
Unit
A
10.7 10.8 mJ
±20
0.5
-55 ... 150
class 0 (<250V)
260
55/150/56
V
W
°C
°C
Rev.2.1
page 1
2013-11-07
1 page  
1 Power dissipation (P)
P tot=f(T A)
2 Power dissipation (N)
P tot=f(T A)
BSL308C
0.6 0.6
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0
0 40
3 Drain current (P)
I D=f(T A)
parameter: V GS≤-10 V
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 40
80
TA [°C]
80
TA [°C]
120
120
Rev.2.1
0
160 0 40
4 Drain current (N)
I D=f(T A)
parameter: V GS≥10 V
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
160 0
40
80
TA [°C]
80
TA [°C]
120
120
160
160
page 5
2013-11-07
5 Page 
25 Typ. gate charge (P)
V GS=f(Q gate); I D=-2.0 A pulsed
parameter: V DD
10
26 Typ. gate charge (N)
V GS=f(Q gate); I D=2.3 A pulsed
parameter: V DD
10
BSL308C
8
-24 V
6
-15 V
-6 V
4
8
15 V
6
6V
24 V
4
22
0
012345
-Qgate [nC]
27 Drain-source breakdown voltage (P)
V BR(DSS)=f(T j); I D=-250 µA
0
6 012345
Qgate [nC]
28 Drain-source breakdown voltage (N)
V BR(DSS)=f(T j); I D=250 µA
6
36 36
34 34
32 32
30 30
28 28
26 26
24
-60 -20 20 60 100 140 180
Tj [°C]
24
-60 -20 20
60 100 140 180
Tj [°C]
Rev.2.1
page 11
2013-11-07
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BSL308C.PDF ] | |
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