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부품번호 | ITS41k0S-ME-N 기능 |
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기능 | Smart High-Side NMOS-Power Switch | ||
제조업체 | Infineon | ||
로고 | |||
전체 19 페이지수
ITS41k0S-ME-N
Smart High-Side NMOS-Power Switch
Data Sheet
Rev 1.0, 2012-09-01
Standard Power
3 Pin Configuration
3.1 Pin Assignment
4
ITS41k0S-ME-N
Pin Configuration
12
Figure 3 Pin configuration top view, PG-SOT223-4
3
3.2 Pin Definitions and Functions
Pin Symbol Function
1 IN Input, activates the power switch in case of connection to GND
2 VS Supply voltage
3
OUT
Output to the load
4 VS Supply voltage
Data Sheet
4 Rev 1.0, 2012-09-01
4페이지 5 Electrical Characteristics
ITS41k0S-ME-N
Electrical Characteristics
Table 4
VS = 9V to 60V; Tj = -40°C to 125°C; all voltages with respect to ground. Currents flowing into
the device unless otherwise specified in chapter “Block Diagram and Terms”. Typical values
at Vs = 13.5V, Tj = 25°C
Parameter
Symbol
Min.
Values
Typ. Max.
Unit Note /
Test Condition
Number
Powerstage
NMOS ON Resistance
RDSON –
0.8 1.5 Ω IOUT= 150mA;
5.0.1
Tj = 25°C;
IN conected to GND
NMOS ON Resistance
RDSON –
1.5 3.0 Ω IOUT= 150mA;
5.0.2
Tj = 125°C;
IN conected to GND
NMOS ON Resistance
RDSON – 2 5 Ω IOUT= 50mA;
5.0.3
Tj = 25°C;
VS = 6V;
IN conected to GND
Nominal Load Current 1);
device on PCB 2)
Timings of Power Stages
ILNOM
0.2
–
–
A Ta = 85°C;
Tj = 125°C;
5.0.4
Turn ON Time 3)
(to 90% of Vout);
VS to GND transition of VIN
Turn ON Time 3)
(to 90% of Vout);
VS to GND transition of VIN
Turn OFF Time 3)
(to 10% of Vout);
GND to VS transition of VIN
Turn OFF Time 3)
(to 10% of Vout);
GND to VS transition of VIN
ON-Slew Rate 3)
(10 to 30% of Vout);
VS to GND transition of VIN
ON-Slew Rate 3)
(10 to 30% of Vout);
VS to GND transition of VIN
OFF-Slew Rate 3)
(70 to 40% of Vout);
GND to VS transition of VIN
OFF-Slew Rate 3)
(70 to 40% of Vout);
GND to VS transition of VIN
Standby current consumption
tON –
tON –
tOFF
–
tOFF
–
SRON –
SRON –
SROFF –
SROFF –
– 125 4) µs VS=13.5V;
RL = 270Ω
45 100 µs VS=13.5V;
RL = 270Ω;
Tj = 25°C
– 175 4) µs VS=13.5V;
RL = 270Ω
40 140 µs VS=13.5V;
RL = 270Ω;
Tj = 25°C
– 6 4) V / µs VS=13.5V;
RL = 270Ω
1.3 4.0 V / µs VS=13.5V;
RL = 270Ω;
Tj = 25°C
– 8 4) V / µs VS=13.5V;
RL = 270Ω
1.7 4.0 V / µs VS=13.5V;
RL = 270Ω;
Tj = 25°C
5.0.5
5.0.6
5.0.7
5.0.8
5.0.9
5.0.10
5.0.11
5.0.12
Data Sheet
7 Rev 1.0, 2012-09-01
7페이지 | |||
구 성 | 총 19 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
ITS41k0S-ME-N | Smart High-Side NMOS-Power Switch | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |