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부품번호 | BTS50085-1TMB 기능 |
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기능 | Smart High-side High Current Power Switch | ||
제조업체 | Infineon Technologies | ||
로고 | |||
전체 18 페이지수
PROFET® Data Sheet BTS50085-1TMB
Smart Highside High Current Power Switch
Reversave
Product Summary
• Reverse battery protection by self turn on of
power MOSFET
Features
• Overload protection
• Current limitation
• Short circuit protection
• Over temperature protection
• Over voltage protection (including load dump)
• Clamp of negative voltage at output
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON
IL(ISO)
IL(SC)
IL : IIS
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
• Open load detection via current sense
PG-TO220-7-11
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
• Green product (RoHS compliant)
• AEC qualified
7
Application
• Power switch with current sense diagnostic
1
Standard
feedback for up to 48 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
70
62
5.0 ... 58
9
44
90
13 000
V
V
V
mΩ
A
A
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protection functions.
Voltage
source
Voltage
sensor
3 IN
ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
I IN Temperature
sensor
VIN
V IS
Logic GND
I IS
IS
5
RIS
PROFET
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1
2008-Jan-24
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
Data Sheet BTS50085-1TMB
Symbol
Values
Unit
min typ max
Inverse Load Current Operation
On-state resistance (Pins 1,2,6,7 to pin 4)
VbIN = 12 V, IL = - 20 A
Tj = 25 °C:
see diagram on page 10
Tj = 150 °C:
Nominal inverse load current (Pins 1,2,6,7 to Tab)
VON = -0.5 V, Tc = 85 °C
Drain-source diode voltage (Vout > Vbb)
IL = - 20 A, IIN = 0, Tj = +150°C
RON(inv)
IL(inv)
-VON
-- 7.2
14.6
50 60
9 mΩ
17
-- A
-- 0.6 0.7 mV
Operating Parameters
Operating voltage (VIN = 0) 12)
Under voltage shutdown 13)14)
Under voltage start of charge pump
see diagram page 15
Over voltage protection 15)
Ibb = 15 mA
Tj =-40°C:
Tj = 25...+150°C:
Standby current
IIN = 0, Vbb=35V
Tj =-40...+25°C:
Tj = 150°C:
Vbb(on)
VbIN(u)
VbIN(ucp)
VbIN(Z)
Ibb(off)
5.0 -- 58
1.5 3.0 4.5
V
V
3.0 4.5 6.0 V
68 -- -- V
70 72
--
-- 15 25 µA
-- 25 50
12) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).
For the voltage range 0..58 V the device provides embedded protection functions against overtemperature
and short circuit.
13) not subject to production test, specified by design
14) VbIN = Vbb - VIN see diagram on page 15. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
(typ.) the charge pump is not active and VOUT ≈Vbb - 3 V.
15) See also VON(CL) in circuit diagram on page 9.
Infineon Technologies AG
Page 4
2008-Jan-24
4페이지 Data Sheet BTS50085-1TMB
Truth Table
Normal
operation
Very high
load current
Current-
limitation
Short circuit to
GND
Over-
temperature
Short circuit to
Vbb
Open load
Negative output
voltage clamp
Inverse load
current
Input
current
level
L
H
H
Output
level
L
H
H
HH
LL
HL
LL
HL
LH
HH
L Z23)
HH
LL
LH
HH
Current
Sense
IIS
0
nominal
IIS, lim
0
0
0
0
0
0
<nominal 22)
0
0
0
0
0
Remark
=IL / kilis, up to IIS=IIS,lim
up to VON=VON(Fold back)
IIS no longer proportional to IL
VON > VON(Fold back)
if VON>VON(SC), shutdown will occure
L = "Low" Level
H = "High" Level
Over temperature reset by cooling: Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
Terms
VbIN
Vbb
VIN
RIN
I IN
I bb
4
Vbb
IN OUT
3 PROFET
VON
IL
1,2,6,7
VbIS
VIS
IS
5 I IS
DS
R IS
VOUT
Two or more devices can easily be connected in
parallel to increase load current capability.
RON measurement layout
l≤
5.5mm
Vbb force
Out Force Sense
contacts contacts
(both out
pins parallel)
Typical RON for SMD version is about 0.2 mΩ less
than straight leads due to l ≈ 2 mm
22) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
23) Power Transistor "OFF", potential defined by external impedance.
Infineon Technologies AG
Page 7
2008-Jan-24
7페이지 | |||
구 성 | 총 18 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
BTS50085-1TMA | Smart High-side High Current Power Switch | Infineon Technologies |
BTS50085-1TMB | Smart High-side High Current Power Switch | Infineon Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |