|
|
|
부품번호 | BTS50080-1TMA 기능 |
|
|
기능 | Smart High-Side Power Switch | ||
제조업체 | Infineon Technologies | ||
로고 | |||
전체 27 페이지수
Datasheet, Rev. 1.0, Jan. 2008
BTS50080-1TMA
Smart High-Side Power Switch
PROFET®
One Channel
Automotive Power
Smart High-Side Power Switch
BTS50080-1TMA
Overview
Protective Functions
• ReverSave®, channel switches on in case of reverse polarity
• Reverse battery protection without external components
• Short circuit protection with latch
• Over-load protection
• Multi-step current limitation
• Thermal shutdown with restart
• Over-voltage protection (including load dump)
• Loss of ground protection
• Loss of Vbb protection (with external diode for charged inductive loads)
• Electrostatic discharge protection (ESD)
Diagnostic Functions
• Proportional load current sense (with defined fault signal in case of overload operation, over temperature
shutdown and/or short circuit shutdown)
• Open load detection in ON-state by load current sense
Applications
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads
• All types of resistive, inductive and capacitive loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Datasheet
4 Rev. 1.0, 2008-01-23
4페이지 Smart High-Side Power Switch
BTS50080-1TMA
General Product Characteristics
4 General Product Characteristics
4.1 Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Tj = 25°C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Max.
Unit Conditions
Supply Voltages
4.1.1
Supply voltage
Vbb -16 38 V –
4.1.2
Supply voltage for full short circuit
Vbb(SC)
0
30 V –
protection (single pulse)2)
4.1.3
Supply Voltage for Load Dump
protection3)
Vbb(LD) – 45 V RI = 2 Ω,
RL = 1 Ω
Logic Pins
4.1.4
Voltage at input pin
4.1.5
Current through input pin
4.1.6
Voltage at current sense pin
4.1.7
Current through sense pin
4.1.8
Input voltage slew rate 4)
VbIN
IIN
VbIS
IIS
dVbIN/dt
-16
-120
-16
-120
-20
63 V –
15 mA –
63 V –
15 mA –
20 V/µs –
Power Stages
4.1.9
Load current 5)
4.1.10
Maximum energy dissipation per
channel (single pulse)
IL
EAS
-
ILx(SC)
A
–
-
0.4 J
Vbb = 12 V,
IL(0) = 20 A,
Tj(0) = 150°C
Temperatures
4.1.11 Junction temperature
4.1.12 Storage temperature
Tj -40 150 °C –
Tstg -55 150 °C –
ESD Susceptibility
4.1.13 ESD susceptibility HBM
VESD
-3 3 kV according to
EIA/JESD 22-A
114B
1) Not subject to production test, specified by design.
2) Short circuit is defined as a combination of remaining resistances and inductances. See Figure 13.
3) Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator.
4) Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series in the input
path. A series resistor RIN in the input path is also required for reverse operation at Vbb ≤ -16V. See also Figure 14.
5) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range.
Protection features are not designed for continuous repetitive operation.
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Datasheet
7 Rev. 1.0, 2008-01-23
7페이지 | |||
구 성 | 총 27 페이지수 | ||
다운로드 | [ BTS50080-1TMA.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BTS50080-1TMA | Smart High-Side Power Switch | Infineon Technologies |
BTS50080-1TMB | Smart High-Side Power Switch | Infineon Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |