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BTS50055-1TMC 데이터시트 PDF




Infineon Technologies에서 제조한 전자 부품 BTS50055-1TMC은 전자 산업 및 응용 분야에서
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부품번호 BTS50055-1TMC 기능
기능 Smart Highside High Current Power Switch
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BTS50055-1TMC 데이터시트, 핀배열, 회로
Data Sheet BTS50055-1TMC
Smart Highside High Current Power Switch
Reversave
Reverse battery protection by self turn on of
power MOSFET
Features
Overload protection
Current limitation
Short circuit protection
Overtemperature protection
Overvoltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads 1)
Low ohmic inverse current operation
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of Vbb protection2)
Electrostatic discharge (ESD) protection
Green product (RoHS compliant)
AEC qualified
Product Summary
Operating voltage
On-state resistance
Noinal current
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(on)
RON
IL(nom)
IL(ISO)
IL(SC)
IL : IIS
PG-TO220-7-4
7
Application
Power switch with current sense diagnostic
1
SM D
feedback for 12 V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
Replaces electromechanical relays, fuses and discrete circuits
5.0 ... 34 V
6.0 m
17 A
70 A
130 A
14 000
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOSchip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
3 IN
ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
I IN Temperature
sensor
VIN
VIS
Logic GND
I IS
IS
5
RIS
PROFET
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 8).
Infineon Technologies AG
Page 1of 17
2010-April-27




BTS50055-1TMC pdf, 반도체, 판매, 대치품
Data Sheet BTS50055-1TMC
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Inverse Load Current Operation
On-state resistance (Pins 1,2,6,7 to pin 4)
VbIN = 12 V, IL = - 20 A
Tj = 25 °C:
see page 9
Tj = 150 °C:
Nominal inverse load current (Pins 1,2,6,7 to Tab)
VON = -0.5 V, Tc = 85 °C11)
Drain-source diode voltage (Vout > Vbb)
IL = - 20 A, IIN = 0, Tj = +150°C
RON(inv)
IL(inv)
-VON
Operating Parameters
Operating voltage (VIN = 0) 9, 13)
Undervoltage shutdown 14)
Undervoltage start of charge pump
see diagram page 14
Overvoltage protection15)
Ibb = 15 mA
Tj =-40°C:
Tj = 25...+150°C:
Standby current
IIN = 0
Tj =-40...+25°C:
Tj = 150°C:
Vbb(on)
VbIN(u)
VbIN(ucp)
VbIN(Z)
Ibb(off)
Values
Unit
min typ max
-- 4.4 6.0 m
7.9 10.5
55 70
-- A
-- 0.6
-- V
5.0 -- 34
1.5 3.0 4.5
V
V
3.0 4.5 6.0 V
60 -- -- V
62 66
--
-- 15 25 µA
-- 25 50
13) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).
For all voltages 0 ... 34 V the device is provides embedded protection functions against overtemperature and
short circuit.
14) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
(typ.) the charge pump is not active and VOUT Vbb - 3 V.
15) See also VON(CL) in circuit diagram on page 8.
Page 4 of 17
2010-April-27

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BTS50055-1TMC 전자부품, 판매, 대치품
Data Sheet BTS50055-1TMC
Terms
VbIN
Vbb
VIN
RIN
I IN
I bb
4
Vbb
IN OUT
3 PROFET
VON
IL
1,2,6,7
VbIS
VIS
IS
5 I IS
DS
R IS
VOUT
Two or more devices can easily be connected in
parallel to increase load current capability.
Input circuit (ESD protection)
V bb
Current sense status output
Vbb R bb
ZD
IIS
V
Z,IS
IS
R IS
VIS
VZ,IS = 66 V (typ.), RIS = 1 knominal (or 1 k/n, if n
devices are connected in parallel). IS = IL/kilis can be
driven only by the internal circuit as long as Vout - VIS >
5 V. If you want measure load currents up to IL(M), RIS
should
be
less
than
Vbb -
IL(M) /
5V
Kilis.
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
V bIN
V
Z,IN
IN
IIN
ZD
R bb
Inductive and overvoltage output clamp
+ Vbb
VZ1
VON
V IN
When the device is switched off (IIN = 0) the voltage
between IN and GND reaches almost Vbb. Use a
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
VZ,IN = 66 V (typ).
VZG
IS
DS
OUT
PROFET
VOUT
VON is clamped to VON(Cl) = 42 V typ. At inductive load
switch-off without DS, VOUT is clamped to VOUT(CL) =
-19 V typ. via VZG. With DS, VOUT is clamped to Vbb -
VON(CL) via VZ1. Using DS gives faster deenergizing of
the inductive load, but higher peak power dissipation in
the PROFET. In case of a floating ground with a
potential higher than 19V referring to the OUT –
potential the device will switch on, if diode DS is not
used.
Page 7 of 17
2010-April-27

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