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PDF A4102 Data sheet ( Hoja de datos )

Número de pieza A4102
Descripción LDO MODE OVP WITH INTEGRATED P-MOSFET
Fabricantes AiT Semiconductor 
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No Preview Available ! A4102 Hoja de datos, Descripción, Manual

AiT Semiconductor Inc.
www.ait-ic.com
A4102
LDO MODE OVP WITH INTEGRATED P-MOSFET
BATTERY MANAGEMENT
DESCRIPTION
The A4102 is Li+ charger IC with integrated
P-MOSFET. The device is fabricated with
advanced CMOS technology to achieve
maintaining low static power dissipation over a very
broad VCC operating range.
The A4102 integrates a P-MOSFET and Schottky
diode which is normally a discrete device employed
for conventional battery charging design of mobile
phone system. In addition to that, A4102 works like
a LDO mode to keep CHRIN voltage stable when
ACIN goes high. And thus it will not trigger the
CHRIN pin over-voltage protection when ACIN
voltage increased to as high as 15V.
FEATURES
A Built-In P-MOSFET
LDO mode makes CHRIN voltage stable around
5.5V
Range of operation input voltage: Max 15V
Charging current up to 1A
Environment Temperature: -20~ 85
Available in DFN8(2x2) Package
APPLICATION
Cell phone and other portable device
The A4102 provides complete Li+ charger
protections and saves the external MOSFET and
Schottky diode for the charger of cell phone’s
PMIC. It is available in a DFN8(2x2) package.
TYPICAL APPLICATION
The above features and small package make the
A4102 an ideal part for cell phones applications.
The A4102 is available in DFN8(2x2) Package.
ORDERING INFORMATION
Package Type
Part Number
DFN8
(2x2)
J8 A4102J8R
A4102J8VR
Note
R: Tape & Reel
V: Halogen free Package
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
REV1.0 - JAN 2012 RELEASED -
-1-

1 page




A4102 pdf
AiT Semiconductor Inc.
www.ait-ic.com
A4102
LDO MODE OVP WITH INTEGRATED P-MOSFET
BATTERY MANAGEMENT
TYPICAL PERFORMANCE CHARACTERISTICS
T = 25°C unless specified.
1. Line Regulation
2. Charger Current VS VGATDRV
3. On Resistance
4. Transfer Character
5. Output Character
REV1.0 - JAN 2012 RELEASED -
-5-

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