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부품번호 | A4102 기능 |
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기능 | LDO MODE OVP WITH INTEGRATED P-MOSFET | ||
제조업체 | AiT Semiconductor | ||
로고 | |||
전체 8 페이지수
AiT Semiconductor Inc.
www.ait-ic.com
A4102
LDO MODE OVP WITH INTEGRATED P-MOSFET
BATTERY MANAGEMENT
DESCRIPTION
The A4102 is Li+ charger IC with integrated
P-MOSFET. The device is fabricated with
advanced CMOS technology to achieve
maintaining low static power dissipation over a very
broad VCC operating range.
The A4102 integrates a P-MOSFET and Schottky
diode which is normally a discrete device employed
for conventional battery charging design of mobile
phone system. In addition to that, A4102 works like
a LDO mode to keep CHRIN voltage stable when
ACIN goes high. And thus it will not trigger the
CHRIN pin over-voltage protection when ACIN
voltage increased to as high as 15V.
FEATURES
A Built-In P-MOSFET
LDO mode makes CHRIN voltage stable around
5.5V
Range of operation input voltage: Max 15V
Charging current up to 1A
Environment Temperature: -20℃ ~ 85℃
Available in DFN8(2x2) Package
APPLICATION
Cell phone and other portable device
The A4102 provides complete Li+ charger
protections and saves the external MOSFET and
Schottky diode for the charger of cell phone’s
PMIC. It is available in a DFN8(2x2) package.
TYPICAL APPLICATION
The above features and small package make the
A4102 an ideal part for cell phones applications.
The A4102 is available in DFN8(2x2) Package.
ORDERING INFORMATION
Package Type
Part Number
DFN8
(2x2)
J8 A4102J8R
A4102J8VR
Note
R: Tape & Reel
V: Halogen free Package
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
REV1.0 - JAN 2012 RELEASED -
-1-
AiT Semiconductor Inc.
www.ait-ic.com
A4102
LDO MODE OVP WITH INTEGRATED P-MOSFET
BATTERY MANAGEMENT
ELECTRICAL CHARACTERISTICS
TJ = 25℃
Parameter
Threshold Voltage
CHRIN Voltage
Off-State Leakage
Reverse Block Leakage
On –State Drain Current
Vds/Idson
Symbol
Vth
V CHRIN2
IDss1
IDss2
Idson
Rdson
Conditions
Ids = -1uA, Vds = Vgs
VIN = 6.0V, ICHRIN = 50mA
VOUT = 0, VIN = 10V,
VGATDRV = VCHRIN1
VOUT = 5V, VIN = 0,
VGATDRV = VCHRIN1 = 0V
VIN = 5V, VOUT = 4V,VGATDRV =
1V
Vs = 5V, Vg = 1V, Vd = 4V
Min Typ Max Unit
-1.0 -0.7 -0.4 V
5.0 5.5 6.0 V
- - 1 uA
- 2 5 uA
0.9 1.2 1.5
0.5 0.75 1
A
Ω
REV1.0 - JAN 2012 RELEASED -
-4-
4페이지 AiT Semiconductor Inc.
www.ait-ic.com
PACKAGE INFORMATION
Dimension in DFN8(2x2) (Unit: mm)
A4102
LDO MODE OVP WITH INTEGRATED P-MOSFET
BATTERY MANAGEMENT
Symbol
A
A1
A3
D
E
D1
E1
k
b
e
L
Min Max
0.700/0.800
0.800/0.900
0.000
0.050
0.203REF.
1.900
2.100
1.900
2.100
1.100
1.300
0.500
0.700
0.200MIN.
0.180
0.300
0.500TYP.
0.250
0.450
REV1.0 - JAN 2012 RELEASED -
-7-
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ A4102.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
A410 | Triode | Philips |
A4102 | LDO MODE OVP WITH INTEGRATED P-MOSFET | AiT Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |