(PDF) TPT5609 Datasheet - NPN Transistor

Número de pieza	TPT5609
Descripción	NPN Transistor
Fabricantes	WEJ
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No Preview Available ! TPT5609 TPT5609 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 Collector-base voltage A V(BR)CBO: 25 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditions Ic=10µA, IE=0 Ic=1mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500mA IC=800mA, IB=80mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, IE=0, f=1MHz MIN TYP MAX UNIT 25 V 20 V 5V 1 µA 1 µA 60 240 0.5 V 1V 190 MHz 22 pF CLASSIFICATION OF hFE Rank Range A 60-120 B 85-170 C 120-240 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] 1 page

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PDF TPT5609 Data sheet ( Hoja de datos )