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PDF MDD3754 Data sheet ( Hoja de datos )
| Número de pieza | MDD3754 | |
| Descripción | P-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDD3754
P-Channel Trench MOSFET, -40V, -24.4A, 43mΩ
General Description
The MDD3754 uses advanced MagnaChip’s Trench
MOSFET Technology to provided high performance in on-
state resistance, switching performance and reliability.
Low RDS(ON), Low Gate Charge can be offering superior
benefit in the application.
Features
VDS = -40V
ID = -24.4A
@VGS = -10V
RDS(ON)
< 43mΩ @ VGS = -10V
< 58mΩ @ VGS = -4.5V
Applications
Inverters
General purpose applications
D
G
Absolute Maximum Ratings (TC =25o)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Characteristics
(Note 2)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
TC=25oC
TC=100oC
TC=25oC
TC=100oC
(Note 3)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
S
Rating
-40
±20
-24.4
-15.4
-50
41.7
16.7
40.5
-55~+150
Unit
V
V
A
A
A
W
mJ
oC
Rating
40
3.0
Unit
oC/W
October 2008. Version 1.0
1 MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
2 Leads, DPAK (TO252)
Dimensions are in millimeters unless otherwise specified
October 2008. Version 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDD3754.PDF ] | |
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