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BA12004BF PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BA12004BF
기능 7 Circuits Darlinton Transistor Array
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BA12004BF 데이터시트, 핀배열, 회로
Datasheet
7 Circuits
Darlinton Transistor Array
BA12003B BA12003BF BA12004B BA12004BF
General Description
BA12003B/BF,BA12004B/BFare darlinton transistor array
consist of 7circuits, input resistor to limit base current and
output surge absorption clamp diode.
Features
Built-in 7 circuits
High output break down voltage
High DC output current gain
Built-in input resistor to limit base current
Built-in output surge absorption clamp diode
Key Specifications
Output break down voltage
VCE=60V(max)
Output current
Io=500mA/ch(max)
Operating supply voltage range-0.5V to +30V
Operating temperature range
-40°C to +85°C
DC current gain
hfe=1000(min)
Input resistor
BA12003B/BF Rin=2.7kΩ
BA12004B/BF Rin=10.5kΩ
Packages
DIP16
SOP16
W(Typ) x D(Typ) x H(Max)
19.40mm x 6.50mm x 7.95mm
10.00mm x 6.20mm x 1.71mm
Applications
Motor Drivers
LED Drivers
Solenoid Drivers
Low Side Switch
Typical Application Circuit
VCC
VCC
DIP16
SOP16
BA12003B / BA12004B BA12003BF / BA12004BF
VCC
16 15 14 13 12 11 10 9
12345678
μCOM
Product structure: Silicon monolithic integrated circuit
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product has not designed protection against radioactive rays
1/16
TSZ02201-0RCR0GZ00100-1-2
12.May.2015 Rev.002




BA12004BF pdf, 반도체, 판매, 대치품
BA12003B BA12003BF BA12004B BA12004BF
Test Circuit
. Output Leakage Current IL
OPEN
OPEN
IL
VCE
. DC Current Gain hFE=IO/II
Output Saturation Voltage VCEsat
OPEN
. Input Voltage VI
OPEN
II IO
IO
VCEsat
VI
VCE
. Input Current II
OPEN
II OPEN
VI
. Input Capacity CI
OPEN
. Diode Reverse Current IR
OPEN
IR
VR
OPEN
GND
Capacitance
bridge
HI
VI
OPEN
TEST SIGNAL LEVEL 20mVrms
6. Diode Forward Voltage VF
OPEN
OPEN
IF
VF
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
4/16
TSZ02201-0RCR0GZ00100-1-2
12.May.2015 Rev.002

4페이지










BA12004BF 전자부품, 판매, 대치품
BA12003B BA12003BF BA12004B BA12004BF
Typical Performance Curve (Reference Data) - continued
100
80
60
40
20
0
-50
0
Ta[]
50
100
Figure 9 .
Turn-ON Time vs Ambient Temperature
800
600
400
200
0
-50
0 50
Ta[]
100
Figure 10 .
Turn-OFF Time vs Ambient Temperature
500
460
450
TA=25℃
on PCB
400
383
350
328
300
1ch
250
200
150
100
These limit is based on calculation
50 (IGND÷the number of ON-channel).
2ch
3ch
4ch
5ch
6ch
7ch
0
0 10 20 30 40 50 60 70 80 90 100
Duty Cycle [%]
Figure 11.
Output CurrentDuty Cycle
(BA12003BF/BA12004BF)
500
460
450
TA=85℃
on PCB
400
383
350
328
300
250
200 1ch
150
2ch
100 3ch
50
These limit is based on calculation
0 (IGND÷the number of ON-channel).
4ch
5ch
6ch
7ch
0 10 20 30 40 50 60 70 80 90 100
Duty Cycle [%]
Figure 12.
Output CurrentDuty Cycle
(BA12003BF/BA12004BF)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
7/16
TSZ02201-0RCR0GZ00100-1-2
12.May.2015 Rev.002

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BA12004B

High voltage/ high current Darlington transistor array

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BA12004BF

7 Circuits Darlinton Transistor Array

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