|
|
PDF K2260 Data sheet ( Hoja de datos )
| Número de pieza | K2260 | |
| Descripción | MOSFET ( Transistor ) - 2SK2260 | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K2260 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
Ordering number:ENN4753
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
N-Channel Silicon MOSFET
2SK2260
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2062A
[2SK2260]
4.5
1.6 1.5
0.4 0.5
32
1.5
3.0
1
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Mounted on ceramic board (250mm2× 0.8mm)
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Marking : KO
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
ID=1mA, VGS=0
VDS=150V, VGS=0
VGS=±18V, VDS=0
VDS=10V, ID= 1mA
VDS=10V, ID=600mA
ID=600mA, VGS=10V
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
Ratings
150
±20
1.2
4.8
3.5
1.5
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
150 V
100 µA
±10 µA
1.5 2.5 V
0.8 1.1
S
1.6 2.2 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73099TH (KT)/42594MT BX-0704 No.4753–1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K2260.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K226 | Silicon N-Channel Enhancement MOS FET |  Hitachi |
| K2260 | MOSFET ( Transistor ) - 2SK2260 | Sanyo Semicon Device |
| K2266 | MOSFET ( Transistor ) - 2SK2266 |  Toshiba Semiconductor |
| K2267 | MOSFET ( Transistor ) - 2SK2267 | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |