|
|
|
부품번호 | HFU4N50 기능 |
|
|
기능 | N-Channel MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
July 2005
HFD4N50 / HFU4N50
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) typ ȍ
ID = 2.6 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 13 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD4N50
1
2
3
HFU4N50
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
2.6
1.64
10.4
ρͤ͑͡
440
2.6
4.5
4.5
PD
TJ, TSTG
TL
Total Power Dissipation (TA=25ఁ) *
Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
45
0.36
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/ఁ͑
ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
Parameter
RșJC Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.78
50
110
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡
Typical Characteristics (continued)
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R
101 DS(on)
10 Ps
100 Ps
1 ms
10 ms
100 100 ms
DC
10-1
100
* Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125
TC, Case Temperature [ 䉝㼉
Figure 10. Maximum Drain Current
vs Case Temperature
150
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-5
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. Zș -&(t) = 2.78 䉝㻛㼃 㻌㻹㼍㼤㻚
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zș -&(t)
PDM
single pulse
t1
t2
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
101
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡
4페이지 Package Dimension
{vTY\YG
6.6±0.2
5.35±0.15
2.3±0.1
0.5±0.05
0.8±0.2
0.6±0.2
2.3typ
2.3typ
1.2±0.3
0.05+-00..015
0.5+-00..015
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ HFU4N50.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HFU4N50 | N-Channel MOSFET | SemiHow |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |