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부품번호 | HFU1N60S 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
Sep 2009
HFD1N60S / HFU1N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ = 10 Ω
ID = 1.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 3.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 10 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD1N60S
1
2
3
HFU1N60S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
1.0
0.6
4.0
±30
33
1.0
2.8
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25℃) *
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
28
0.22
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
4.53
50
110
Units
℃/W
◎ SEMIHOW REV.A0,Sep 2009
Typical Characteristics (continued)
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
100
10 ms
100 ms
DC
10-1
100
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
∗ Note :
1. VGS = 10 V
2. I = 0.5 A
D
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
1.0
0.8
0.6
0.4
0.2
0.0
25 50 75 100 125
Figure 10. MaTxC,imCasuemTemDprearaitunreC[oCu]rrent
vs Case Temperature
150
D=0.5
100 0.2
0.1
0.05
0.02
10-1 0.01
10-2
10-5
* Notes :
1. ZθJC(t) = 4.53 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
PDM
10-4
10-3
10-2
t1
t2
10-1
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
101
◎ SEMIHOW REV.A0,Sep 2009
4페이지 Package Dimension
TO-252
6.6±0.2
5.35±0.15
2.3±0.1
0.5±0.05
0.8±0.2
0.6±0.2
2.3typ
2.3typ
1.2±0.3
0.05+-00..015
0.5+-00..015
◎ SEMIHOW REV.A0,Sep 2009
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ HFU1N60S.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
HFU1N60 | N-Channel MOSFET | SemiHow |
HFU1N60F | 600V N-Channel MOSFET | SemiHow |
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