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부품번호 | HFP4N65 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
April 2006
HFP4N65
650V N-Channel MOSFET
BVDSS = 650 V
RDS(on) typ = 2.3 Ω
ID = 3.6 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 15 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V
100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
3.6
2.3
14.4
±30
240
3.6
10
5.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
100
0.8
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.25
--
62.5
Units
℃/W
◎ SEMIHOW REV.A0,April 2006
Typical Characteristics (continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
101 100 µs
1 ms
10 ms
100 DC
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
Figure 8. On-Resistance Variation
vs Temperature
4
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature [ ℃]
Figure 10. Maximum Drain Current
vs Case Temperature
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
10-5
※ Notes :
1. Zθ JC(t) = 1.25 ℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
single pulse
PDM
t1
t2
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
101
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,April 2006
4페이지 Package Dimension
TO-220 (A)
9.90±0.20
φ3.60±0.20
4.50±0.20
1.30±0.20
1.27±0.20
1.52±0.20
2.54typ
2.54typ
2.40±0.20
0.80±0.20
0.50±0.20
◎ SEMIHOW REV.A0,April 2006
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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