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Datasheet HFU1N80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HFU1N80 | N-Channel MOSFET HFD1N80 / HFU1N80
April 2006
HFD1N80 / HFU1N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characterist |  SemiHow | mosfet |
HFU Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HFU1N60 | N-Channel MOSFET HFD1N60_HFU1N60
Dec 2005
HFD1N60 / HFU1N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.9 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics U SemiHow mosfet | | |
| 2 | HFU1N60F | 600V N-Channel MOSFET HFD1N60F_HFU1N60F
Sep 2015
HFD1N60F / HFU1N60F
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics SemiHow mosfet | | |
| 3 | HFU1N60S | N-Channel MOSFET HFD1N60S / HFU1N60S
Sep 2009
HFD1N60S / HFU1N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteri SemiHow mosfet | | |
| 4 | HFU1N65 | N-Channel MOSFET HFD1N65 / HFU1N65
April 2006
HFD1N65 / HFU1N65
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Character SemiHow mosfet | | |
| 5 | HFU1N65S | N-Channel MOSFET HFD1N65S / HFU1N65S
HFD1N65S / HFU1N65S
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Exte SemiHow mosfet | | |
| 6 | HFU1N70 | N-Channel MOSFET HFD1N70 / HFU1N70
Dec 2008
HFD1N70 / HFU1N70
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.8 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characterist SemiHow mosfet | | |
| 7 | HFU1N80 | N-Channel MOSFET HFD1N80 / HFU1N80
April 2006
HFD1N80 / HFU1N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characterist SemiHow mosfet | |
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