|
|
|
부품번호 | 85N3LH5 기능 |
|
|
기능 | STD85N3LH5 | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 16 페이지수
STD85N3LH5
STP85N3LH5 - STU85N3LH5
N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK
STripFET™ V Power MOSFET
Features
www.DataSheet4U.com Type
STD85N3LH5
STP85N3LH5
STU85N3LH5
VDSS
30 V
30 V
30 V
RDS(on) max
< 0.005 Ω
< 0.0054 Ω
< 0.0054 Ω
ID
80 A
80 A
80 A
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in the standard
packages, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
3
1
DPAK
IPAK
3
2
1
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD85N3LH5
STP85N3LH5
STU85N3LH5
Marking
85N3LH5
85N3LH5
85N3LH5
Package
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
September 2008
Rev 5
1/16
www.st.com
16
Electrical characteristics
STD85N3LH5 - STP85N3LH5 - STU85N3LH5
2 Electrical characteristics
www.DataSheet4U.com
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
Voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID = 250 µA, VGS= 0
VDS = 20 V
VDS = 20 V,Tc = 125 °C
VGS = ± 22 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
SMD version
VGS = 10 V, ID = 40 A
VGS = 5 V, ID = 40 A
SMD version
VGS = 5 V, ID = 40 A
Min. Typ. Max. Unit
30 V
1 µA
10 µA
±100 nA
1 2.5 V
0.042 0.005 Ω
0.0046 0.0054 Ω
0.0052 0.0065 Ω
0.0058 0.0071 Ω
Table 5. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qgs1
Qgs2
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre Vth gate-to-source
charge
Post Vth gate-to-source
charge
RG Gate input resistance
Test conditions
VDS = 25 V, f=1 MHz,
VGS = 0
VDD = 15 V, ID = 80 A
VGS = 5 V
(see Figure 16)
VDD = 15 V, ID = 80 A
VGS = 5 V
(see Figure 19)
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
open drain
Min Typ. Max. Unit
1850
380
58
pF
pF
pF
14 nC
6.8 nC
4.7 nC
2.3 nC
4.5 nC
1.2 Ω
4/16
4페이지 STD85N3LH5 - STP85N3LH5 - STU85N3LH5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
www.DataSheet4U.com
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
Figure 12. Source-drain diode forward
characteristics
7/16
7페이지 | |||
구 성 | 총 16 페이지수 | ||
다운로드 | [ 85N3LH5.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
85N3LH5 | STD85N3LH5 | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |