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PDF 2SC3330 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3330 | |
| Descripción | NPN Silicon Epitaxial Planar Transistor | |
| Fabricantes | PACO | |
| Logotipo |  |
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ST 2SC3330
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O,
Y, G and L, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 6 V, IC = 1 mA
Current Gain Group
Collector Base Cutoff Current
at VCB = 40 V
Emitter Base Cutoff Current
at VEB = 3 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 100 mA, IB =10 mA
Gain Bandwidth Product
at VCE = 6 V, IC = 10 mA
Output Capacitance
at VCB = 6 V, f = 1 MHz
Noise Figure
at VCE = 6 V, IE = 0.5 mA, f = 1 KHz, RS = 500 Ω
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
60
50
5
200
300
150
- 55 to + 150
Unit
V
V
V
mA
mW
OC
OC
Symbol Min.
R hFE
O hFE
Y hFE
G hFE
L hFE
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
fT
Cob
NF
40
70
120
200
350
-
-
60
50
5
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
0.15
200
2.5
4
Max.
80
140
240
400
700
0.1
0.1
-
-
-
0.3
-
-
-
Unit
-
-
-
-
-
µA
µA
V
V
V
V
MHz
pF
dB
Dated : 07/12/2002
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SC3330.PDF ] | |
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