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Datasheet NDTD2403C Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NDTD2403C | Isolated 3W Wide Input Dual Output DC/DC Converters www.murata-ps.com
NDTD Series
Isolated 3W Wide Input Dual Output DC/DC Converters
FEATURES RoHS compliant Industry standard footprint Power density 0.90W/cm3 2:1 Input range, 3W output power, minimum
3:1 input range with power derating to 2W
Dual isolated output Short circuit pro | muRata | converter |
NDT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NDT | Isolated 3W Wide Input Dual Output DC-DC Converters C&D Technologies converter | | |
2 | NDT014 | N-Channel Enhancement Mode Field Effect Transistor September 1996
NDT014 N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to m Fairchild transistor | | |
3 | NDT014L | N-Channel Logic Level Enhancement Mode Field Effect Transistor August 1996
NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especi Fairchild transistor | | |
4 | NDT01N60 | N-Channel Power MOSFET, Transistor NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea ON Semiconductor mosfet | | |
5 | NDT01N60T1G | N-Channel Power MOSFET, Transistor NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea ON Semiconductor mosfet | | |
6 | NDT02N40 | N-Channel Power MOSFET, Transistor NDD02N40, NDT02N40
N-Channel Power MOSFET 400 V, 5.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage Gate−to� ON Semiconductor mosfet | | |
7 | NDT02N60Z | N-Channel Power MOSFET, Transistor NDT02N60Z
N-Channel Power MOSFET 600 V, 8.0 W
Features
• 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Zener−protected • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise not ON Semiconductor mosfet | |
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SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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