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BD45E231 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD45E231
기능 Counter Timer Built-in CMOS Voltage Detector IC
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BD45E231 데이터시트, 핀배열, 회로
Datasheet
Voltage Detector IC Series for Automotive
Counter Timer Built-in
CMOS Voltage Detector IC
BD45Exxxx-M series BD46Exxxx-M series
General Description
ROHM’s BD45Exxxx-M and BD46Exxxx-M series are
highly accurate, low current consumption Voltage
Detector IC series. Because the counter timer delay
circuit is built into those series, an external capacitor for
the delay time setting is unnecessary. The lineup was
established with two output types (Nch open drain and
CMOS output) and detection voltages range from 2.3V
to 4.8V in increments of 0.1V, so that the series may be
selected according to application.
Features
Counter Timer Built-in
No delay time setting capacitor required
Ultra-low current consumption
Two output types (Nch open drain and CMOS output)
Package SSOP5 is similar to SOT-23-5 (JEDEC)
AEC-Q100 Qualified
Key Specifications
Detection voltage:
2.3V to 4.8V (Typ.)
High accuracy detection voltage:
Ultra-low current consumption:
Operating temperature range:
Three internal, fixed delay time:
0.1V steps
±1.0%
0.85µA (Typ.)
-40°C to +105°C
50ms
100ms
200ms
Package
SSOP5
2.90mm x 2.80mm x 1.25mm
Applications
Circuits using microcontrollers or logic circuits that
require a reset for automotive applications (car
navigation, car audio, meter panel, exterior lamp etc.)
Typical Application Circuit
VDD1
VDD2
BD45Exxxx-M
RL
Micro
RST controller
CL
Noise-filtering
Capacitor
Open Drain Output Type
BD45Exxxx-M series
Connection Diagram
SSOP5
VDD
VOUT
GND
TOP VIEW
Marking
Lot. No
ER SUB GND
VDD1
BD46Exxxx-M
RST
Micro
controller
GND
CL
Noise-filtering
Capacitor
CMOS Output Type
BD46Exxxx-M series
Pin Descriptions
PIN No. Symbol
Function
1 ER Manual Reset
2
SUB
Substrate *
3
GND
GND
4
VOUT
Reset Output
5 VDD Power Supply Voltage
*Connect the substrate to GND.
Product structureSilicon monolithic integrated circuit
.www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product is not designed for protection against radioactive rays
1/14
TSZ02201-0R7R0G300110-1-2
27.Aug.2013 Rev.004




BD45E231 pdf, 반도체, 판매, 대치품
BD45Exxxx-M series BD46Exxxx-M series
Absolute maximum ratings
Parameter
Symbol
Limits
Power Supply Voltage
VDD-GND
-0.3 to +10
Output Voltage
Nch Open Drain Output
CMOS Output
VOUT
GND-0.3 to +10
GND-0.3 to VDD+0.3
Output Current
IO 60
ER pin Voltage
VCT
GND-0.3 to VDD+0.3
Power Dissipation
*1,*2
Pd
540
Operating Temperature
Topr -40 to +105
Ambient Storage Temperature
Tstg -55 to +125
*1 Reduced by 5.4mW/°C when used over 25°C.
*2 When mounted on ROHM standard circuit board (70mm×70mm×1.6mm, glass epoxy board).
Unit
V
V
mA
V
mW
°C
°C
Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C)
Parameter
Symbol
Condition
Detection Voltage
Detection Voltage
Temperature coefficient
Hysteresis Voltage
‘High’ Output
Delay time
Circuit Current
when ON
Circuit Current
when OFF
VDD=HL, RL=470kΩ
VDET
VDET/
T
VDET
VDET=2.5V
VDET=3.0V
VDET=3.3V
VDET=4.2V
VDET=4.8V
-40°C to +105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
VDDLHL, RL=470kΩ
tPLH
IDD1
IDD2
CL=100pF,
RL=100
BD45EXX5, BD46EXX5
BD45EXX1, BD46EXX1
*1,*2,*3 BD45EXX2, BD46EXX2
VDD=VDET-0.2V, VER=0V VDET=2.3V to 3.1V
VDD=VDET-0.2V, VER=0V VDET=2.3V to 3.1V
VDD=VDET-0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET-0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET-0.2V, VER=0V VDET=4.3V to 4.8V
VDD=VDET-0.2V, VER=0V VDET=4.3V to 4.8V
VDD=VDET+0.2V, VER=0V VDET=2.3V to 3.1V
VDD=VDET+0.2V, VER=0V VDET=2.3V to 3.1V
VDD=VDET+0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET+0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET+0.2V, VER=0V VDET=4.3V to 4.8V
VDD=VDET+0.2V, VER=0V VDET=4.3V to 4.8V
Min.
VDET(T)
*1 ×0.99
2.475
2.418
2.404
2.970
2.901
2.885
3.267
3.191
3.173
4.158
4.061
4.039
4.752
4.641
4.616
-
VDET(T)
×0.03
45
90
180
*1 -
-
*1 -
-
*1 -
-
*1 -
-
*1 -
-
*1 -
-
Limit
Typ.
VDET(T)
2.5
-
-
3.0
-
-
3.3
-
-
4.2
-
-
4.8
-
-
±100
VDET(T)
×0.05
50
100
200
0.70
0.70
0.75
0.75
0.80
0.80
0.75
0.75
0.80
0.80
0.85
0.85
Max.
VDET(T)
×1.01
2.525
2.584
2.597
3.030
3.100
3.117
3.333
3.410
3.428
4.242
4.341
4.364
4.848
4.961
4.987
Unit
V
±360 ppm/°C
VDET(T)
×0.08
55
110
220
2.10
2.85
2.25
3.00
2.40
3.15
2.25
4.28
2.40
4.50
2.55
4.73
V
ms
µA
µA
VDET(T):Standard Detection Voltage (2.3V to 4.8V, 0.1V step)
RL :Pull-up resistor to be connected between VOUT and power supply.
CL :Capacitor to be connected between VOUT and GND.
*1 Guarantee is Ta=25°C.
*2 tPLH:VDD=(VDET(T)-0.5V)(VDET(T)+0.5V)
*3 tPLH:VDD=Please set up the rise up time between VDD=0VDET more than 100µs.
Attention: Please connect ‘ER’ to the GND when not in use.
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
4/14
TSZ02201-0R7R0G300110-1-2
27.Aug.2013 Rev.004

4페이지










BD45E231 전자부품, 판매, 대치품
BD45Exxxx-M series BD46Exxxx-M series
Typical Performance Curves
2.0
BD45BED248512-8M1G
1.5 BD46E281-M
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 9 10
VDD SUPPLY VOLTAGE VDD[V]
Fig.3 Circuit Current
20
BD4B6ED248612-8M1G
15 VDD=6.0V
10 VDD=4.8V
5
0
0 12 34 56
DRAIN-SOURCE VOLTAGE VDS[V]
Fig.5 “High” Output Current
20
BD4B5DE4258218-1MG
15 BD46E281-M
VDD=2.4V
10
5
VDD=1.2V
0
0.0 0.5 1.0 1.5 2.0 2.5
DRAIN-SOURCE VOLTAGE VDS[V]
Fig.4 “Low” Output Current
7
BD45BED284154-M21G
6
BD46E281-M
5
4
3 Ta=25
2
1
Ta=25
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VDD SUPPLY VOLTAGE VDD[V]
Fig.6 I/O Characteristics
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
7/14
TSZ02201-0R7R0G300110-1-2
27.Aug.2013 Rev.004

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부품번호상세설명 및 기능제조사
BD45E231

Counter Timer Built-in CMOS Voltage Detector IC

Rohm
Rohm
BD45E231-M

Counter Timer Built-in CMOS Voltage Detector IC

ROHM
ROHM

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