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Datasheet 2SC2510 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12SC2510Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) l Specified 28V, 28MHz Characteristics l Output Power : Po = 150WPEP (Min.) l Power Gain : Gp = 12.2dB (Min.) l Collector Efficiency : ηC = 35% (Min
Toshiba Semiconductor
Toshiba Semiconductor
transistor
22SC2510Silicon NPN POWER TRANSISTOR

HG Semiconductors 2SC2510HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150W PEP (Min.) Power Gain : Gp = 12.2dB (Min.) Collector Efficiency ηC: = 35% (Min.) Intermodulation Distortion : IMD = 30dB (Max.) MAXIMU
HGSemi
HGSemi
transistor
32SC2510ASILICON NPN EPITAXIAL PLANAR TYPE

2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 28V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 150WPEP (Min.) : Gp = 12
Toshiba Semiconductor
Toshiba Semiconductor
transistor


2SC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12SC0108T2Dx-xxDual Channel Ultra-compact Low-cost SCALE-2 Driver Core

2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica
CT-Concept
CT-Concept
transistor
22SC0829Silicon NPN epitaxial planar type

DataSheet.in Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 • Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parame
Panasonic Semiconductor
Panasonic Semiconductor
transistor
32SC0829Silicon NPN epitaxial planar type

DataSheet.in Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 • Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parame
Panasonic Semiconductor
Panasonic Semiconductor
transistor
42SC100NPN Transistor

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ETC
ETC
transistor
52SC1000(2SCxxx) Low Level and General Purpose Amplifiers

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Micro Electronics
Micro Electronics
transistor
62SC1000Silicon NPN Epitaxial Transistor

ETC
ETC
transistor
72SC1002Silicon NPN Power Transistors

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1002 DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and sym
SavantIC
SavantIC
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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